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| 型号： | NTMSD3P303R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 2.34A 8-SOIC |
| 产品变化通告： | Product Obsolescence 13/Apr/2009 |
| 标准包装： | 2,500 |
| 系列： | FETKY™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.34A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 3.05A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 24V |
| 功率 - 最大： | 730mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMSD3P303R2GOS |
NTMSD3P303R2
FETKY ?
P ? Channel Enhancement ? Mode
Power MOSFET and Schottky Diode
Dual SO ? 8 Package
3
Features
? High Efficiency Components in a Single SO ? 8 Package
? High Density Power MOSFET with Low R DS(on) ,
Schottky Diode with Low V F
? Independent Pin ? Outs for MOSFET and Schottky Die
Allowing for Flexibility in Application Use
? Less Component Placement for Board Space Savings
? SO ? 8 Surface Mount Package,
Mounting Information for SO ? 8 Package Provided
? Pb ? Free Package is Available
Applications
? DC ? DC Converters
? Low Voltage Motor Control
? Power Management in Portable and Battery ? Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MOSFET MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol Value Unit
http://onsemi.com
MOSFET
? 3.05 AMPERES
? 30 VOLTS
0.085 W @ V GS = ? 10 V
SCHOTTKY DIODE
3.0 AMPERES
30 VOLTS
420 mV @ I F = 3.0 A
1 8
A C
2 7
A C
6
S D
4
5
8
1
AYWW G
G
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ?
Junction ? to ? Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance ?
Junction ? to ? Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance ?
Junction ? to ? Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Operating and Storage
Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = ? 30 Vdc, V GS = ? 4.5 Vdc,
Peak I L = ? 7.5 Apk, L = 5 mH, R G = 25 W )
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
V DSS
V GS
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
T J , T stg
E AS
T L
? 30
" 20
171
0.73
? 2.34
? 1.87
? 8.0
100
1.25
? 3.05
? 2.44
? 12
62.5
2.0
? 3.86
? 3.10
? 15
? 55 to
+150
140
260
V
V
° C/W
W
A
A
A
° C/W
W
A
A
A
° C/W
W
A
A
A
° C
mJ
° C
G D
(TOP VIEW)
MARKING DIAGRAM &
PIN ASSIGNMENT
C C D D
8
E3P303
SO ? 8
CASE 751
STYLE 18 1
A A S G
E3P303 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping ?
NTMSD3P303R2 SO ? 8 2500/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR ? 4 or G ? 10 PCB, Steady State.
2. Mounted onto a 2 ″ square FR ? 4 Board
(1in sq, 2 oz Cu 0.06 ″ thick single sided), Steady State.
3. Mounted onto a 2 ″ square FR ? 4 Board
(1 in sq, 2 oz Cu 0.06 ″ thick single sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
NTMSD3P303R2G SO ? 8 2500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 2
1
Publication Order Number:
NTMSD3P303R2/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMSD6N303 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTMSD6N303R2 | 功能描述:MOSFET 30V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD6N303R2G | 功能描述:MOSFET 30V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD6N303R2SG | 功能描述:MOSFET NFET 30V 6A .024R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTN12 | 制造商:OTAX Corporation 功能描述: |
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