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| 型号： | NTMSD3P303R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 2.34A 8-SOIC |
| 产品变化通告： | Product Obsolescence 13/Apr/2009 |
| 标准包装： | 2,500 |
| 系列： | FETKY™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.34A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 3.05A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 24V |
| 功率 - 最大： | 730mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NTMSD3P303R2GOS |
NTMSD3P303R2
SCHOTTKY MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Thermal Resistance ? Junction ? to ? Ambient (Note 5)
Thermal Resistance ? Junction ? to ? Ambient (Note 6)
Thermal Resistance ? Junction ? to ? Ambient (Note 7)
Average Forward Current (Note 7)
(Rated V R , T A = 100 ° C)
Peak Repetitive Forward Current (Note 7)
(Rated V R , Square Wave, 20 kHz, T A = 105 ° C)
Non ? Repetitive Peak Surge Current (Note 7)
(Surge Applied at Rated Load Conditions, Half ? Wave, Single Phase, 60 Hz)
Symbol
V RRM
V R
R q JA
R q JA
R q JA
I O
I FRM
I FSM
Value
30
197
97
62.5
3.0
6.0
30
Unit
V
° C/W
° C/W
° C/W
A
A
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
5. Minimum FR ? 4 or G ? 10 PCB, Steady State.
6. Mounted onto a 2 ″ square FR ? 4 Board (1 in sq, 2 oz Cu 0.06 ″ thick single sided), Steady State.
7. Mounted onto a 2 ″ square FR ? 4 Board (1 in sq, 2 oz Cu 0.06 ″ thick single sided), t ≤ 10 seconds.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted) (No te 8)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = ? 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = ? 30 Vdc, V GS = 0 Vdc, T J = 25 ° C)
(V DS = ? 30 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current
(V GS = ? 20 Vdc, V DS = 0 Vdc)
Gate ? Body Leakage Current
(V GS = +20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
I GSS
? 30
?
?
?
?
?
?
? 30
?
?
?
?
?
?
? 1.0
? 25
? 100
100
Vdc
mV/ ° C
m Adc
nAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = ? 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? State Resistance
(V GS = ? 10 Vdc, I D = ? 3.05 Adc)
(V GS = ? 4.5 Vdc, I D = ? 1.5 Adc)
Forward Transconductance
(V DS = ? 15 Vdc, I D = ? 3.05 Adc)
V GS(th)
R DS(on)
g FS
? 1.0
?
?
?
?
? 1.7
3.6
0.063
0.090
5.0
? 2.5
?
0.085
0.125
?
Vdc
W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = ? 24 Vdc,
V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
520
170
70
750
325
135
pF
8. Handling precautions to protect against electrostatic discharge are mandatory.
http://onsemi.com
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相关代理商/技术参数 |
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| NTMSD6N303 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTMSD6N303R2 | 功能描述:MOSFET 30V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD6N303R2G | 功能描述:MOSFET 30V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD6N303R2SG | 功能描述:MOSFET NFET 30V 6A .024R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTN12 | 制造商:OTAX Corporation 功能描述: |
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