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| 型号： | NTMS5P02R2SG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3.95A 8SOIC |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.95A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 33 毫欧 @ 5.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.25V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 35nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1900pF @ 16V |
| 功率 - 最大： | 380mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTMS5P02R2SGOSCT |
NTMS5P02, NVMS5P02
Power MOSFET
-5.4 Amps, -20 Volts
P ? Channel Enhancement ? Mode
Single SOIC ? 8 Package
http://onsemi.com
Features
? High Density Power MOSFET with Ultra Low R DS(on)
Providing Higher Efficiency
? Miniature SOIC ? 8 Surface Mount Package ? Saves Board Space
? Diode Exhibits High Speed with Soft Recovery
? I DSS Specified at Elevated Temperature
? Drain ? to ? Source Avalanche Energy Specified
? Mounting Information for the SOIC ? 8 Package is Provided
? These Devices are Pb ? Free and are RoHS Compliant
? NVMS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
V DSS
? 20 V
G
R DS(ON) TYP
26 m W @ ? 4.5 V
Single P ? Channel
D
I D MAX
? 5.4 A
Qualified and PPAP Capable
S
Applications
? Power Management in Portable and Battery ? Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
8
1
MARKING DIAGRAM &
PIN ASSIGNMENT
D D D D
8
SOIC ? 8
CASE 751
STYLE 13
1
E5P02x
AYWW G
G
NC S
S G
E5P02
x
A
Y
WW
G
= Specific Device Code
= Blank or S
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMS5P02R2G
NVMS5P02R2G
Package
SOIC ? 8
(Pb ? Free)
SOIC ? 8
Shipping ?
2500 / Tape & Reel
2500 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
? Semiconductor Components Industries, LLC, 2012
December, 2012 ? Rev. 3
1
Publication Order Number:
NTMS5P02R2/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS7N03R2 | 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS7N03R2_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 7 Amps, 30 Volts |
| NTMS7N03R2G | 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD2P102LR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMSD2P102LR2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:FETKY? |
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