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参数资料
| 型号： | NTMS5P02R2SG |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3.95A 8SOIC |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.95A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 33 毫欧 @ 5.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.25V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 35nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1900pF @ 16V |
| 功率 - 最大： | 380mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTMS5P02R2SGOSCT |
NTMS5P02, NVMS5P02
PACKAGE DIMENSIONS
SOIC ? 8 NB
CASE 751 ? 07
ISSUE AK
? Y ?
B
? X ?
8
1
G
A
5
4
S
0.25 (0.010)
M
Y
M
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751 ? 01 THRU 751 ? 06 ARE OBSOLETE. NEW
STANDARD IS 751 ? 07.
MILLIMETERS INCHES
0 _ _
0 _ _
? Z ?
H
D
0.25 (0.010)
M
Z Y
C
S
X
SEATING
PLANE
0.10 (0.004)
S
N
X 45 _
M
J
DIM
A
B
C
D
G
H
J
K
M
N
S
MIN MAX
4.80 5.00
3.80 4.00
1.35 1.75
0.33 0.51
1.27 BSC
0.10 0.25
0.19 0.25
0.40 1.27
8
0.25 0.50
5.80 6.20
MIN MAX
0.189 0.197
0.150 0.157
0.053 0.069
0.013 0.020
0.050 BSC
0.004 0.010
0.007 0.010
0.016 0.050
8
0.010 0.020
0.228 0.244
SOLDERING FOOTPRINT*
1.52
0.060
STYLE 13:
PIN 1. N.C.
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm
inches
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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NTMS5P02R2/D
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| NTMSD2P102LR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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