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| 型号： | NTP5411NG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 80A TO-220AB |
| 产品变化通告： | Product Obsolescence 07/Jul/2010 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4500pF @ 25V |
| 功率 - 最大： | 166W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
NTB5411N, NTP5411N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage Temper-
ature Coefficient
V (BR)DSS
V (BR)DSS /T J
V DS = 0 V, I D = 250 m A
60
54.2
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 60 V
T J = 25 ° C
T J = 150 ° C
10
100
m A
Gate ? Body Leakage Current
I GSS
V DS = 0 V, V GS = $ 20 V
$ 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(th)
V GS = V DS , I D = 250 m A
2.0
3.2
4.0
V
Negative Threshold Temperature Coefficient
V GS(th) /T J
6.6
mV/ ° C
Drain ? to ? Source On Voltage
V DS(on)
V GS = 10 V, I D = 80 A
0.71
0.92
V
V GS = 10 V, I D = 40 A, 150 ° C
0.65
Static Drain ? to ? Source On ? Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 10 V, I D = 40 A
V GS = 15 V, I D = 40 A
8.4
70
10
m W
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
C iss
C oss
V DS = 25 V, V GS = 0 V,
f = 1 MHz
3365
615
4500
pF
Transfer Capacitance
C rss
230
Total Gate Charge
Threshold Gate Charge
Q G(TOT)
Q G(TH)
V GS = 10 V, V DS = 48 V,
I D = 80 A
92
4.1
130
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
19
43
SWITCHING CHARACTERISTICS, V GS = 10 V (Note 3)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V GS = 10 V, V DD = 48 V,
I D = 80 A, R G = 9.1 W
22
122
116
113
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
I S = 37.5 A
T J = 25 ° C
T J = 150 ° C
0.91
0.8
1.1
V dc
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Stored Charge
t rr
t a
t b
Q RR
I S = 37.5 A dc , V GS = 0 V dc ,
dI S /dt = 100 A/ m s
62
43
19
0.15
ns
m C
2. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperatures.
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