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参数资料
| 型号： | NTP5860NG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 220A TO-220-3 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 220A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 180nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 10760pF @ 25V |
| 功率 - 最大： | 283W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
NTB5860N, NTP5860N,
NVB5860N
N-Channel Power MOSFET
60 V, 220 A, 3.0 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free and are RoHS Compliant
? NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
3.0 m W @ 10 V
D
I D MAX
220 A
Qualified and PPAP Capable
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
G
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
V DSS
V GS
60
$ 20
V
V
S
N ? CHANNEL MOSFET
Continuous Drain
Current, R q JC
Power Dissipation,
R q JC
Steady
State
Steady
State
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
I D
P D
220
156
283
A
W
4
1
2
4
Pulsed Drain Current
t p = 10 m s
I DM
660
A
3
Current Limited by Package
I DMmax
130
A
TO ? 220AB
D 2 PAK
Operating and Storage Temperature Range
T J , T stg
? 55 to
+175
° C
1
2
3
CASE 221A
STYLE 5
CASE 418B
STYLE 2
Source Current (Body Diode)
I S
130
A
MARKING DIAGRAMS
Single Pulse Drain ? to ? Source Avalanche
Energy (L = 0.3 mH)
Lead Temperature for Soldering
Purposes (1/8 ″ from Case for 10 Seconds)
E AS
T L
735
260
mJ
° C
4
Drain
& PIN ASSIGNMENTS
4
Drain
THERMAL RESISTANCE RATINGS
NTB
Parameter
Junction ? to ? Case (Drain) Steady State
Symbol
R q JC
Max
0.53
Unit
° C/W
NTP
5860NG
AYWW
5860NG
AYWW
3
1
Source
Gate
Junction ? to ? Ambient ? Steady State (Note 1) R q JA 28
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1
Gate
2
Drain
2
Drain
G = Pb ? Free Device
A = Assembly Location*
3
Source
Y = Year
WW = Work Week
*Could be one or two digit alpha or numeric code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
September, 2012 ? Rev. 2
1
Publication Order Number:
NTB5860N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTP5860NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET |
| NTP5860NLG | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP5862NG | 功能描述:MOSFET 60V T2 TO220 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP5863NG | 功能描述:MOSFET NFET TO220 60V 76A 8MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP5864NG | 功能描述:MOSFET NFETSO8FL60V17A39M OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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