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| 型号： | NTR4170NT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 3.2A SGL SOT23-3 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 Product Obsolescence 14/Apr/2010 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 3.2A，10V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.76nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 432pF @ 15V |
| 功率 - 最大： | 780mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
NTR4170N
Power MOSFET
30 V, 3.1 A, Single N ? Channel, SOT ? 23
Features
? Low R DS(on)
? Low Gate Charge
? Low Threshold Voltage
? Halide Free
? This is a Pb ? Free Device
Applications
? Power Converters for Portables
? Battery Management
? Load/Power Switch
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
55 m W @ 10 V
70 m W @ 4.5 V
110 m W @ 2.5 V
I D MAX
3.1 A
2.8 A
2.0 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
SIMPLIFIED SCHEMATIC ? N ? CHANNEL
Parameter
Symbol
Value
Unit
D
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
V DSS
V GS
30
± 12
2.4
V
V
G
t ≤ 30 s
t ≤ 10 s
Steady
State
T A = 25 ° C
I D
3.1
3.9
1.7
A
S
MARKING DIAGRAM/
PIN ASSIGNMENT
Power Dissipation
(Note 1)
t ≤ 30 s
t ≤ 10 s
Steady
State
t ≤ 30 s
t ≤ 10 s
T A = 85 ° C
T A = 25 ° C
P D
P D
2.3
2.8
0.48
0.82
1.25
W
1
3
2
SOT ? 23
CASE 318
STYLE 21
3
Drain
TREM G
G
1
1 2
Gate Source
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I DM
T J ,
T stg
I S
T L
8.0
? 55 to
150
0.82
260
A
° C
A
° C
TRE = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Device
NTR4170NT1G
NTR4170NT3G
Package
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
Shipping ?
3000/Tape & Reel
10000/Tape & Reel
Junction ? to ? Ambient ? Steady State (Note 1)
Junction ? to ? Ambient ? t ≤ 30 s
Junction ? to ? Ambient ? t < 10 s (Note 1)
R q JA
R q JA
R q JA
260
153
100
° C/W
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
? Semiconductor Components Industries, LLC, 2012
June, 2012 ? Rev. 1
1
Publication Order Number:
NTR4170N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTR4171PT3G | MOSFET P-CH 30V 2.2A SOT23-3 |
| NTR4501NT1 | MOSFET N-CHAN 3.2A 20V SOT-23 |
| NTR4502PT1G | MOSFET P-CH 30V 1.13A SOT-23 |
| NTR4503NT3G | MOSFET N-CH 30V 1.5A SOT-23 |
| NTS2101PT1 | MOSFET P-CH 8V 1.4A SOT-323 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTR4171P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 |
| NTR4171PT1G | 功能描述:MOSFET PFET SOT23 30V TR 0.075R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR4171PT3G | 功能描述:MOSFET PFET SOT23 30V 0.075R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR4501N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 |
| NTR4501NST1G | 制造商:ON Semiconductor 功能描述:NFET SOT23 20V 3.2A 80MO - Tape and Reel 制造商:ON Semiconductor 功能描述:MOSFET NFET SOT23 20V 3.2A 80MO 制造商:ON Semiconductor 功能描述:REEL / NFET SOT23 20V 3.2A 80MO |
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