参数资料
型号: NTR4503NT3G
厂商: ON Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: MOSFET N-CH 30V 1.5A SOT-23
产品变化通告: Product Discontinuation 04/April/2008
Wire Change for SOT23 Pkg 26/May/2009
标准包装: 10,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 1.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 110 毫欧 @ 2.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 7nC @ 10V
输入电容 (Ciss) @ Vds: 250pF @ 24V
功率 - 最大: 420mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 带卷 (TR)
NTR4503N, NVTR4503N
Power MOSFET
30 V, 2.5 A, Single N ? Channel, SOT ? 23
Features
? Leading Planar Technology for Low Gate Charge / Fast Switching
? 4.5 V Rated for Low Voltage Gate Drive
? SOT ? 23 Surface Mount for Small Footprint (3 x 3 mm)
? AEC Q101 Qualified ? NVTR4503N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? DC ? DC Conversion
? Load/Power Switch for Portables
? Load/Power Switch for Computing
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) TYP
85 m W @ 10 V
105 m W @ 4.5 V
N ? Channel
I D MAX
2.5 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
D
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 10 s
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
2.0
1.5
2.5
0.73
A
W
G
S
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
1.5
1.1
0.42
A
W
1
3
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
Pulsed Drain Current
ESD Capability (Note 3)
t p = 10 m s
C = 100 pF,
RS = 1500 W
I DM
ESD
10
125
A
V
2
SOT ? 23
CASE 318
TR3 M G
G
Operating Junction and Storage Temperature
T J ,
T stg
? 55 to
150
° C
STYLE 21
1
Gate
2
Source
Source Current (Body Diode)
Peak Source Current
(Diode Forward)
t p = 10 m s
I S
I SM
2.0
4.0
A
A
TR3 = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L
260
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
ORDERING INFORMATION
Device Package Shipping ?
NTR4503NT1G SOT ? 23 3000 / Tape & Reel
(Pb ? Free)
Parameter
Junction ? to ? Ambient ? Steady State (Note 1)
Symbol
R q JA
Max
170
Unit
° C/W
NVTR4503NT1G
SOT ? 23
(Pb ? Free)
3000 / Tape & Reel
Junction ? to ? Ambient ? t < 10 s (Note 1) R q JA 100
Junction ? to ? Ambient ? Steady State (Note 2) R q JA 300
1. Surface ? mounted on FR4 board using 1 in sq pad size.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
July, 2012 ? Rev. 6
1
Publication Order Number:
NTR4503N/D
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