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| 型号： | NTS4173PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 1.2A SC70-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 150 毫欧 @ 1.2A，10V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.1nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 430pF @ 15V |
| 功率 - 最大： | 290mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 标准包装 |
| 其它名称： | NTS4173PT1GOSDKR |
NTS4173P
Power MOSFET
? 30 V, ? 1.3 A, Single P ? Channel, SC ? 70
Features
? ? 30 V BV ds , Low R DS(on) in SC ? 70 Package
? Low Threshold Voltage
? Fast Switching Speed
? This is a Halide ? Free Device
? This is a Pb ? Free Device
V (BR)DSS
http://onsemi.com
R DS(on) MAX
150 m W @ ? 10 V
I D MAX
? 1.2 A
Applications
? Load Switch
? Low Current Inverter and DC ? DC Converters
? Power Switch for Printers, Communication Equipment
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
? 30 V 200 m W @ ? 4.5 V ? 1.0 A
280 m W @ ? 2.5 V ? 0.9 A
SC ? 70/SOT ? 323 (3 LEADS)
S
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
? 30
Unit
V
Gate ? to ? Source Voltage
V GS
± 12
V
G
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
? 1.2
? 0.80
A
D
Power Dissipation
(Note 1)
t ≤ 5s
Steady
State
t ≤ 5s
T A = 25 ° C
T A = 25 ° C
P D
? 1.3
0.29
0.35
W
1
3
MARKING DIAGRAM/
PIN ASSIGNMENT
3 Drain
° C
T stg
TGM G
G
1
2
Gate
Source
Pulsed Drain Current t p = 10 m s I DM ? 5.0 A
Operating Junction and Storage Temperature T J , ? 55 to
150
Source Current (Body Diode) I S ? 1.0 A
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
2
SC ? 70/SOT ? 323
CASE 419
STYLE 8
TG = Specific Device Code
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Parameter
Symbol
Max
Unit
Device
Package
Shipping ?
Junction ? to ? Ambient ? Steady State (Note 1) R q JA 425 ° C/W
Junction ? to ? Ambient ? t ≤ 5 s (Note 1) R q JA 360
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
NTS4173PT1G SC ? 70 3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
* Date code orientation may vary depending upon
manufacturing location
? Semiconductor Components Industries, LLC, 2008
September, 2008 ? Rev. 0
1
Publication Order Number:
NTS4173P/D
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相关代理商/技术参数 |
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| NTS4409N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323 |
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| N-TS48 | 功能描述:烙铁 Nozzle TSOP-48 Pin OTHER REWORK RoHS:否 制造商:Weller 产品:Soldering Stations 类型:Digital, Iron, Stand, Cleaner 瓦特:50 W 最大温度:+ 850 F 电缆类型:US Cord Included |
| NTS500 | 制造商:EMERSON-NETWORKPOWER 制造商全称:Emerson Network Power 功能描述:Active power factor correction |
| NTS500_09 | 制造商:EMERSON-NETWORKPOWER 制造商全称:Emerson Network Power 功能描述:Active power factor correction |
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