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| 型号： | NTS4173PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 1.2A SC70-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 150 毫欧 @ 1.2A，10V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.1nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 430pF @ 15V |
| 功率 - 最大： | 290mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 标准包装 |
| 其它名称： | NTS4173PT1GOSDKR |
NTS4173P
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
V (BR)DSS
I DSS
I GSS
V GS = 0 V, I D = ? 250 m A
V GS = 0 V, V DS = ? 24 V, T J = 25 ° C
V GS = 0 V, V DS = ? 24 V, T J = 85 ° C
V DS = 0 V, V GS = " 12 V
? 30
? 1.0
? 5.0
± 0.1
V
m A
m A
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain ? to ? Source On ? Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = ? 250 m A
V GS = ? 10 V, I D = ? 1.2 A
? 0.7
? 1.15
90
? 1.5
150
V
m W
V GS = ? 4.5 V, I D = ? 1.0 A
V GS = ? 2.5 V, I D = ? 0.9 A
110
165
200
280
Forward Transconductance
g FS
V DS = ? 5 V, I D = ? 1.2 A
3.6
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
430
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = ? 15 V
55
40
Total Gate Charge
Q G(TOT)
4.8
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 15 V,
I D = ? 1.2 A
0.6
1.1
1.5
Total Gate Charge
Q G(TOT)
10.1
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = ? 10 V, V DS = ? 15 V,
I D = ? 1.2 A
0.6
1.1
1.5
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
7.7
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ? 4.5 V, V DS = ? 15 V,
I D = ? 1.2 A, R G = 3 W
5.2
16.2
6.7
Turn ? On Delay Time
t d(on)
5.3
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ? 10 V, V DS = ? 15 V,
I D = ? 1.2 A, R G = 3 W
6.7
19.9
7.1
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V SD
t RR
t a
t b
Q RR
V GS = 0 V, I S = ? 1.0 A
V DS = 20 V, V GS = 0 V, I S = ? 1.0 A,
dI SD /d t = 100 A/ m s
? 0.8
12
10
2.0
7.0
? 1.0
V
ns
nC
2. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
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