参数资料
型号: NTS4173PT1G
厂商: ON Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET P-CH 30V 1.2A SC70-3
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 1.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 150 毫欧 @ 1.2A,10V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 10.1nC @ 10V
输入电容 (Ciss) @ Vds: 430pF @ 15V
功率 - 最大: 290mW
安装类型: 表面贴装
封装/外壳: SC-70,SOT-323
供应商设备封装: SC-70-3(SOT323)
包装: 标准包装
其它名称: NTS4173PT1GOSDKR
NTS4173P
TYPICAL CHARACTERISTICS
5.0
4.5
4.0
3.5
? 10 V
? 4.5 V
? 3.0 V
T J = 25 ° C
? 2.6 V
5.0
4.0
V DS ≥ ? 10 V
3.0
2.5
2.0
? 2.4 V
? 2.2 V
3.0
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
? 2.0 V
? 1.8 V
2.5
3.0
1.0
0
1.0
T J = 125 ° C
T J = 25 ° C
1.25 1.5 1.75
T J = ? 55 ° C
2.0 2.25
2.5
2.75
3.0
0.30
? V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
0.30
? V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.25
T J = 25 ° C
I D = ? 1.2 A
0.25
T J = 25 ° C
V GS = ? 2.2 V
0.20
0.20
0.15
0.10
0.15
0.10
V GS = ? 2.5 V
V GS = ? 4.5 V
0.05
2
3
4
5
6
7
8
9
10
0.05
0.0
V GS = ? 10 V
0.5 1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.6
? V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 3. On ? Resistance vs. Gate Voltage
1000
? I D , DRAIN CURRENT (A)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V GS = ? 10 V
I D = ? 1.2 A
100
10
T J = 150 ° C
T J = 125 ° C
T J = 85 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
1
0
5
10
15
20
25
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
? V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
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