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| 型号： | NTS4409NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 700MA SOT-323 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 700mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 350 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 60pF @ 10V |
| 功率 - 最大： | 280mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 标准包装 |
| 其它名称： | NTS4409NT1GOSDKR |
NTS4409N, NVS4409N
Small Signal MOSFET
25 V, 0.75 A, Single, N ? Channel,
ESD Protection, SC ? 70/SOT ? 323
Features
? Advance Planar Technology for Fast Switching, Low R DS(on)
? Higher Efficiency Extending Battery Life
? AEC ? Q101 Qualified and PPAP Capable ? NVS4409N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Boost and Buck Converter
? Load Switch
? Battery Protection
V (BR)DSS
25 V
Gate
1
http://onsemi.com
R DS(on) Typ
249 m W @ 4.5 V
299 m W @ 2.7 V
S C ? 70 (3 ? Leads )
I D Max
0.75 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
25
Unit
V
3
Drain
Gate ? to ? Source Voltage
V GS
" 8.0
V
Source
2
T A = 25 ° C
T A = 75 ° C
Drain Current
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
Power Dissipation (Note 1)
Pulsed Drain Current
t<5s T A = 25 ° C
Steady
State
Steady State
t v 5s
t p = 10 m s
I D
I D
P D
P D
I DM
0.75
0.7
0.6
0.28
0.33
3.0
A
A
W
W
A
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
3
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
ESD Rating ? Machine Model
T J ,
T STG
I S
T L
? 55 to
+150
0.3
260
25
° C
A
° C
V
SC ? 70/SOT ? 323
CASE 419
STYLE 8
1
Gate
T4 W G
G
2
Source
THERMAL RESISTANCE RATINGS
T4 = Device Code
W = Work Week
Rating
Junction ? to ? Ambient – Steady State (Note 1)
Symbol
R q JA
Max
450
Unit
° C/W
G = Pb ? Free Package
(Note: Microdot may be in either location)
Junction ? to ? Ambient ? t v 5 s (Note 1) R q JA 375
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
Device Package Shipping ?
NTS4409NT1G SOT ? 323 3000 / Tape & Reel
(Pb ? Free)
NVS4409NT1G SOT ? 323 3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 4
1
Publication Order Number:
NTS4409N/D
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