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| 型号： | NTTD1P02R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CHAN DUAL 20V 8MICRO |
| 产品变化通告： | Product Obsolescence 06/Oct/2006 |
| 标准包装： | 4,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.45A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 160 毫欧 @ 1.45A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 265pF @ 16V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | Micro8? |
| 包装： | 带卷 (TR) |
| 其它名称： | NTTD1P02R2GOS |
NTTD1P02R2
Power MOSFET
?1.45 Amps, ?20 Volts
P ? Channel Enhancement Mode
Dual Micro8 t Package
Features
? Ultra Low R DS(on)
? Higher Efficiency Extending Battery Life
? Logic Level Gate Drive
? Miniature Dual Micro8 Surface Mount Package
? Diode Exhibits High Speed, Soft Recovery
? Micro8 Mounting Information Provided
? Pb ? Free Package is Available
Applications
? Power Management in Portable and Battery ? Powered Products,
i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
http://onsemi.com
? 1.45 AMPERES
? 20 VOLTS
160 m W @ V GS = ? 4.5
Dual P ? Channel
D
G
S
MARKING DIAGRAM &
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ?
Junction ? to ? Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 3)
Thermal Resistance ?
Junction ? to ? Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 3)
Symbol
V DSS
V GS
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
Value
? 20
" 8.0
250
0.50
? 1.45
? 1.15
? 10
125
1.0
? 2.04
? 1.64
? 16
Unit
V
V
° C/W
W
A
A
A
° C/W
W
A
A
A
8
1
Micro8
CASE 846A
STYLE 2
BC
WW
G
PIN ASSIGNMENT
D1 D1 D2 D2
8
WW
BC G
G
1
S1 G1 S2 G2
= Specific Device Code
= Work Week
= Pb ? Free Package
Operating and Storage
Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = ? 20 Vdc, V GS = ? 4.5 Vdc,
Peak I L = ? 3.5 Apk, L = 5.6 mH,
R G = 25 W )
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T J , T stg
EAS
T L
? 55 to
+150
35
260
° C
mJ
° C
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping ?
NTTD1P02R2 Micro8 4000/Tape & Reel
NTTD1P02R2G Micro8 4000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR ? 4 or G ? 10 PCB, Steady State.
2. Mounted onto a 2” square FR ? 4 Board
(1 in sq, 2 oz Cu 0.06 ″ thick single sided), Steady State.
3. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 2
1
Publication Order Number:
NTTD1P02R2/D
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| NTTD2P02R2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DSS | 2.4A I(D) | TSSOP |
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