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参数资料
| 型号： | NTS4001NT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 270MA SOT-323 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 270mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 10mA，4V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 1.3nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 33pF @ 5V |
| 功率 - 最大： | 330mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 带卷 (TR) |
| 其它名称： | NTS4001NT1OS |
NTS4001N, NVS4001N
Small Signal MOSFET
30 V, 270 mA, Single N ? Channel, SC ? 70
Features
? Low Gate Charge for Fast Switching
? Small Footprint ? 30% Smaller than TSOP ? 6
? ESD Protected Gate
? AEC ? Q101 Qualified and PPAP Capable ? NVS4001N
? These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
30 V
http://onsemi.com
R DS(on) TYP
1.0 W @ 4.0 V
1.5 W @ 2.5 V
I D Max
270 mA
Applications
? Low Side Load Switch
? Li ? Ion Battery Supplied Devices ? Cell Phones, PDAs, DSC
? Buck Converters
? Level Shifts
Gate
SC ? 70/SOT ? 323 (3 LEADS)
1
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
3
Drain
Parameter
Symbol
Value
Units
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
Source
2
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
270
200
mA
(Top View)
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
330
mW
3
MARKING DIAGRAM &
PIN ASSIGNMENT
Pulsed Drain Current t =10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I DM
T J , T STG
I S
T L
800
? 55 to
150
270
260
mA
° C
mA
° C
1
2
SC ? 70 / SOT ? 323
CASE 419
STYLE 8
1
D
3
TD M G
G
G
S
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
TD = Device Code
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NTS4001NT1G
NVS4001NT1G
Package
SC ? 70
(Pb ? Free)
SC ? 70
(Pb ? Free)
Shipping ?
3000 / Tape & Reel
3000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 5
1
Publication Order Number:
NTS4001N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTS4101PT1 | MOSFET P-CH 20V 1.37A SOT-323 |
| NTS4172NT1G | MOSFET N-CH 30V 1.6A SC70-3 |
| NTS4173PT1G | MOSFET P-CH 30V 1.2A SC70-3 |
| NTS4409NT1G | MOSFET N-CH 25V 700MA SOT-323 |
| NTTD1P02R2G | MOSFET P-CHAN DUAL 20V 8MICRO |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTS4001NT1G | 功能描述:MOSFET 30V 270mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTS4001NT1G-CUT TAPE | 制造商:ON 功能描述:NTS Series N-Channel 30 V 1 Ohm 330 mW SMT Small Signal MOSFET - SOT-323 |
| NTS4101P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 |
| NTS4101P_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 |
| NTS4101PT1 | 功能描述:MOSFET -20V -1.37A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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