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参数资料
| 型号： | NTS4001NT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 270MA SOT-323 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 270mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 10mA，4V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 1.3nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 33pF @ 5V |
| 功率 - 最大： | 330mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 带卷 (TR) |
| 其它名称： | NTS4001NT1OS |
NTS4001N, NVS4001N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 100 m A
30
60
V
mV/ ° C
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
I DSS
I GSS
V GS = 0 V, V DS = 30 V
V DS = 0 V, V GS = ± 10 V
1.0
± 1.0
m A
m A
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 100 m A
0.8
1.2
1.5
V
Gate Threshold
Temperature Coefficient
V GS(TH) /T J
? 3.4
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 4.0 V, I D = 10 mA
1.0
1.5
W
V GS = 2.5 V, I D = 10 mA
1.5
2.0
Forward Transconductance
g FS
V DS = 3.0 V, I D = 10 mA
80
mS
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
20
33
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 5.0 V
19
7.25
32
12
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 5.0 V, V DS = 24 V,
I D = 0.1 A
0.9
0.2
0.3
0.2
1.3
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
td (ON)
17
ns
Rise Time
Turn ? Off Delay Time
Fall Time
tr
td (OFF)
tf
V GS = 4.5 V, V DD = 5.0 V,
I D = 10 mA, R G = 50 W
23
94
82
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 10 mA
T J = 25 ° C
T J = 125 ° C
0.65
0.43
0.7
V
Reverse Recovery Time
t RR
V GS = 0 V, dI S /dt = 8.0 A/ m s,
I S = 10 mA
5.0
ns
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTS4001NT1G | 功能描述:MOSFET 30V 270mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTS4001NT1G-CUT TAPE | 制造商:ON 功能描述:NTS Series N-Channel 30 V 1 Ohm 330 mW SMT Small Signal MOSFET - SOT-323 |
| NTS4101P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 |
| NTS4101P_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 |
| NTS4101PT1 | 功能描述:MOSFET -20V -1.37A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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