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| 型号： | NTS4101PT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1.37A SOT-323 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.37A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 840pF @ 20V |
| 功率 - 最大： | 329mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 带卷 (TR) |
NTS4101P
Power MOSFET
? 20 V, ? 1.37 A, Single P ? Channel, SC ? 70
Features
?
?
?
?
Leading ? 20 V Trench for Low R DS(on)
? 2.5 V Rated for Low Voltage Gate Drive
SC ? 70 Surface Mount for Small Footprint (2x2 mm)
Pb ? Free Package is Available
V (BR)DSS
http://onsemi.com
R DS(on) Typ
83 m W @ ? 4.5 V
I D Max
Applications
? High Side Load Switch
? Charging Circuit
? Single Cell Battery Applications such as: Cell Phones,
Digital Cameras, PDAs
? 20 V
88 m W @ ? 3.6 V
104 m W @ ? 2.5 V
P ? Channel MOSFET
S
? 1.37 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol
Value
Units
G
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
? 20
± 8
V
V
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
Steady
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
? 1.37
? 0.62
0.329
A
W
D
MARKING DIAGRAM &
PIN ASSIGNMENT
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode), Continuous
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I DM
T J ,
T STG
I S
T L
? 4.0
? 55 to
150
? 0.5
260
A
° C
A
° C
3
1
2
SC ? 70/SOT ? 323
CASE 419
STYLE 8
1
D
3
TT M G
G
G
S
2
THERMAL RESISTANCE RATINGS
TT
= Device Code
Parameter Symbol Max Units
Junction ? to ? Ambient – Steady State (Note 1) R q JA 380 ° C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping ?
NTS4101PT1
NTS4101PT1G
SOT ? 323
SOT ? 323
(Pb ? Free)
3000/Tape & Reel
3000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
April, 2011 ? Rev. 3
1
Publication Order Number:
NTS4101P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTS4101PT1G | 功能描述:MOSFET -20V -1.37A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTS4101PT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NTS4-10A | 功能描述:SPACER NYL M4/M3THREAD .40" RoHS:是 类别:硬件，紧固件，配件 >> 电路板衬垫，支座 系列:NTS 标准包装:1,000 系列:900 类型:圆形，无螺纹，母形/母形 尺寸:0.156"（3.96mm）5/32" 外径 螺纹/螺钉/孔尺寸:0.063"（1.60mm）内径 长度 - 总体:1.210"（30.73mm） 材质:尼龙 颜色:自然色 镀层:- 板间高度:1.210" (30.73mm) |
| NTS4172N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 1.7 A, Single N−Channel, SC−70 |
| NTS4172NT1G | 功能描述:MOSFET NFET SC70 30V TR 0.085R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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