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| 型号： | NTS4172NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.6A SC70-3 |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 93 毫欧 @ 1.7A，10V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.38nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 381pF @ 15V |
| 功率 - 最大： | 294mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 带卷 (TR) |
NTS4172N
Power MOSFET
30 V, 1.7 A, Single N ? Channel, SC ? 70
Features
? Low On ? Resistance
? Low Gate Threshold Voltage
? Halide Free
? This is a Pb ? Free Device
V (BR)DSS
http://onsemi.com
R DS(on) MAX
I D MAX
Applications
? Low Side Load Switch
? DC ? DC Converters (Buck and Boost Circuits)
? Optimized for Battery and Load Management Applications in
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
30 V
93 m W @ 10 V
100 m W @ 4.5 V
140 m W @ 2.5 V
SC ? 70/SOT ? 323 (3 LEADS)
D
1.7 A
1.5 A
1.0 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate ? to ? Source Voltage
V GS
± 12
V
G
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
1.6
1.13
A
S
t ≤ 5s
T A = 25 ° C
1.70
T A = 25 ° C
P D
W
° C
T stg
MARKING DIAGRAM/
3 Drain
TFM G
G
1 2
Power Dissipation Steady 0.294
(Note 1) State
t ≤ 5s 0.350
Pulsed Drain Current t p = 10 m s I DM 3.4 A
Operating Junction and Storage Temperature T J , ? 55 to
150
Source Current (Body Diode) I S 0.25 A
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
3
PIN ASSIGNMENT
1
2
SC ? 70/SOT ? 323
CASE 419
STYLE 8
Gate Source
TF = Specific Device Code
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Parameter
Junction ? to ? Ambient ? Steady State (Note 1)
Junction ? to ? Ambient ? t ≤ 5 s (Note 1)
Symbol
R q JA
R q JA
Max
425
360
Unit
° C/W
Device
NTS4172NT1G
Package
SC ? 70
(Pb ? Free)
Shipping ?
3000/Tape & Reel
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
* Date code orientation may vary depending upon
manufacturing location
? Semiconductor Components Industries, LLC, 2008
June, 2008 ? Rev. 0
1
Publication Order Number:
NTS4172N/D
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTS4173P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −30 V, −1.3 A, Single P−Channel, SC−70 |
| NTS4173PT1G | 功能描述:MOSFET PFET SC70 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTS4409N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323 |
| NTS4409NT1G | 功能描述:MOSFET NFET 25V/8V 75mA 350 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| N-TS48 | 功能描述:烙铁 Nozzle TSOP-48 Pin OTHER REWORK RoHS:否 制造商:Weller 产品:Soldering Stations 类型:Digital, Iron, Stand, Cleaner 瓦特:50 W 最大温度:+ 850 F 电缆类型:US Cord Included |
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