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| 型号： | NTS4172NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.6A SC70-3 |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 93 毫欧 @ 1.7A，10V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.38nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 381pF @ 15V |
| 功率 - 最大： | 294mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 带卷 (TR) |
NTS4172N
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
V (BR)DSS
V (BR)DSS
/T J
I DSS
I GSS
V GS = 0 V, I D = 250 m A
I D = 250 m A, Reference to 25 ° C
V GS = 0 V, V DS = 24 V, T J = 25 ° C
V GS = 0 V, V DS = 24 V, T J = 125 ° C
V DS = 0 V, V GS = " 12 V
30
8.4
1.0
5.0
± 100
V
mV/ ° C
m A
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
0.6
1.0
1.4
V
Negative Threshold Temperature
Coefficient
V GS(TH)
/T J
3.1
mV/ ° C
Drain ? to ? Source On ? Resistance
R DS(on)
V GS = 10 V, I D = 1.7 A
58
93
m W
V GS = 4.5 V, I D = 1.5 A
V GS = 2.5 V, I D = 1.0 A
64
79
100
140
Forward Transconductance
g FS
V DS = 5.0 V, I D = 1.7 A
4.2
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
381
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = 15 V
39.6
32.6
Total Gate Charge
Q G(TOT)
4.38
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V,
I D = 1.7 A
0.40
0.62
1.33
Gate Resistance
R G
4.5
W
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
7.5
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DD = 15 V,
I D = 1.7 A, R G = 3 W
4.4
16.1
2.2
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V SD
t RR
t a
t b
Q RR
V GS = 0 V, I S = 1.0 A
V GS = 0 V, I S = 1.0 A,
dI SD /d t = 100 A/ m s
0.76
7.9
5.0
2.9
2.0
1.0
V
ns
nC
2. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
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| NTS4173P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −30 V, −1.3 A, Single P−Channel, SC−70 |
| NTS4173PT1G | 功能描述:MOSFET PFET SC70 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTS4409N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323 |
| NTS4409NT1G | 功能描述:MOSFET NFET 25V/8V 75mA 350 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| N-TS48 | 功能描述:烙铁 Nozzle TSOP-48 Pin OTHER REWORK RoHS:否 制造商:Weller 产品:Soldering Stations 类型:Digital, Iron, Stand, Cleaner 瓦特:50 W 最大温度:+ 850 F 电缆类型:US Cord Included |
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