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| 型号： | NTR4503NT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.5A SOT-23 |
| 产品变化通告： | Product Discontinuation 04/April/2008 Wire Change for SOT23 Pkg 26/May/2009 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 250pF @ 24V |
| 功率 - 最大： | 420mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
NTR4503N, NVTR4503N
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Zero Gate Voltage Drain Current
V (BR)DSS
I DSS
V GS = 0 V, I D = 250 m A
V GS = 0 V, V DS = 24 V
30
36
1.0
V
m A
V GS = 0 V, V DS = 24 V, T J = 125 ° C
10
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Drain ? to ? Source On ? Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = 250 m A
V GS = 10 V, I D = 2.5 A
1.0
1.75
85
3.0
110
V
m W
V GS = 4.5 V, I D = 2.0 A
105
140
Forward Transconductance
g FS
V DS = 4.5 V, I D = 2.5 A
5.3
S
CHARGES AND CAPACITANCES
Input Capacitance
C iss
135
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = 15 V
52
15
Input Capacitance
C iss
130
250
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = 24 V
42
13
75
25
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 10 V, V DS = 15 V,
I D = 2.5 A
V GS = 4.5 V, V DS = 24 V,
I D = 2.5 A
3.6
0.3
0.6
0.7
1.9
0.3
0.6
0.9
7.0
nC
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn ? On Delay Time
t d(on)
5.8
12
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
V GS = 10 V, V DD = 15 V,
I D = 1 A, R G = 6 W
V GS = 10 V, V DD = 24 V,
I D = 2.5 A, R G = 2.5 W
5.8
14
1.6
4.8
6.7
13.6
1.8
10
25
5.0
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V SD
t RR
Q RR
V GS = 0 V, I S = 2.0 A
V GS = 0 V, I S = 2.0 A,
dI S /dt = 100 A/ m s
0.85
9.2
4.0
1.2
V
ns
nC
4. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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