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| 型号： | NTR4171PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 2.2A SOT23 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 2.2A，10V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 720pF @ 15V |
| 功率 - 最大： | 480mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 其它名称： | NTR4171PT1GOSDKR |
NTR4171P
Power MOSFET
? 30 V, ? 3.5 A, Single P ? Channel, SOT ? 23
Features
? Low R DS(on) at Low Gate Voltage
? Low Threshold Voltage
? High Power and Current Handling Capability
? This is a Pb ? Free Device
Applications
? Load Switch
? Optimized for Battery and Load Management Applications in
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
V (BR)DSS
? 30 V
http://onsemi.com
R DS(on) MAX
75 m W @ ? 10 V
110 m W @ ? 4.5 V
150 m W @ ? 2.5 V
I D MAX
? 2.2 A
? 1.8 A
? 1.0 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
P ? CHANNEL MOSFET
S
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
? 30
± 12
V
V
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
? 2.2
? 1.5
A
G
t ≤ 5s
T A = 25 ° C
? 3.5
D
Power Dissipation
(Note 1)
Steady
State
t ≤ 5s
T A = 25 ° C
P D
0.48
1.25
W
3
MARKING DIAGRAM/
PIN ASSIGNMENT
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
I DM
T J ,
T stg
I S
? 15.0
? 55 to
150
? 1.0
A
° C
A
1
2
SOT ? 23
CASE 318
3
Drain
TRFM G
G
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
STYLE 21
1
Gate
2
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
TRF = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Parameter
Symbol
Max
Unit
Junction ? to ? Ambient ? Steady State (Note 1)
R q JA
260
° C/W
ORDERING INFORMATION
Junction ? to ? Ambient ? t ≤ 10 s (Note 1)
R q JA
100
Device
Package
Shipping ?
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
NTR4171PT1G
NTR4171PT3G
SOT ? 23
(Pb ? Free)
SOT ? 23
3000/Tape & Reel
10000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2010
May, 2010 ? Rev. 1
1
Publication Order Number:
NTR4171P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTR4171PT3G | 功能描述:MOSFET PFET SOT23 30V 0.075R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR4501N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 |
| NTR4501NST1G | 制造商:ON Semiconductor 功能描述:NFET SOT23 20V 3.2A 80MO - Tape and Reel 制造商:ON Semiconductor 功能描述:MOSFET NFET SOT23 20V 3.2A 80MO 制造商:ON Semiconductor 功能描述:REEL / NFET SOT23 20V 3.2A 80MO |
| NTR4501NT1 | 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR4501NT1G | 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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