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| 型号： | NTR4171PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 2.2A SOT23 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 2.2A，10V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 720pF @ 15V |
| 功率 - 最大： | 480mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 其它名称： | NTR4171PT1GOSDKR |
NTR4171P
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
V (BR)DSS
V (BR)DSS
/T J
I DSS
I GSS
V GS = 0 V, I D = ? 250 m A
I D = ? 250 m A, Reference to 25 ° C
V GS = 0 V, V DS = ? 24 V, T J = 25 ° C
V GS = 0 V, V DS = ? 24 V, T J = 85 ° C
V DS = 0 V, V GS = " 12 V
? 30
24
? 1.0
? 5.0
± 0.1
V
mV/ ° C
m A
m A
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = ? 250 m A
? 0.7
? 1.15
? 1.4
V
Negative Threshold Temperature Coefficient
V GS(TH) /T J
3.5
mV/ ° C
Drain ? to ? Source On ? Resistance
R DS(on)
V GS = ? 10 V, I D = ? 2.2 A
50
75
m W
V GS = ? 4.5 V, I D = ? 1.8 A
V GS = ? 2.5 V, I D = ? 1.0 A
60
90
110
150
Forward Transconductance
g FS
V DS = ? 5.0 V, I D = ? 2.2 A
7.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Gate Resistance
C iss
C oss
C rss
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
V GS = 0 V, f = 1.0 MHz,
V DS = ? 15 V
V GS = ? 10 V, V DS = ? 15 V,
I D = ? 3.5 A
V GS = ? 4.5 V, V DS = ? 15 V,
I D = ? 3.5 A
720
95
65
15.6
0.7
1.6
2.6
7.4
0.7
1.6
2.6
6.1
pF
nC
nC
W
SWITCHING CHARACTERISTICS, V GS = 4.5 V (Note 4)
Turn ? On Delay Time
t d(on)
8.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ? 10 V, V DS = ? 15 V,
I D = ? 3.5 A, R G = 6 W
11
32
14
Turn ? On Delay Time
t d(on)
9.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ? 4.5 V, V DS = ? 15 V,
I D = ? 3.5 A, R G = 6 W
16
25
22
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V SD
t RR
t a
t b
Q RR
V GS = 0 V, I S = ? 1.0 A, T J = 25 ° C
V GS = 0 V, I S = ? 1.0 A,
dI SD /d t = 100 A/ m s
? 0.8
14
10
4.0
8.0
? 1.2
V
ns
nC
2. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
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