参数资料
型号: NTR4503NT1G
厂商: ON Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET N-CH 30V 1.5A SOT-23
产品变化通告: Wire Change for SOT23 Pkg 26/May/2009
产品目录绘图: MOSFET SOT-23-3 Pkg
标准包装: 10
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 1.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 110 毫欧 @ 2.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 7nC @ 10V
输入电容 (Ciss) @ Vds: 250pF @ 24V
功率 - 最大: 420mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 标准包装
产品目录页面: 1558 (CN2011-ZH PDF)
其它名称: NTR4503NT1GOSDKR
NTR4503N, NVTR4503N
TYPICAL PERFORMANCE CURVES
10
8
10 V
6V
5V
4.5 V
4V
T J = 25 ° C
3.8 V
3.6 V
8
V DS ≥ 10 V
4.2 V
6
3.4 V
4
2
3.2 V
3V
2.8 V
4
25 ° C
100 ° C
0
0
1
2
3
2.6 V
4
0
2
T J = ? 55 ° C
3
4 5
6
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.3
0.25
0.2
I D = 2.5 A
T J = 25 ° C
0.12
0.11
0.10
T J = 25 ° C
V GS = 4.5 V
0.15
0.09
0.1
0.05
0.08
V GS = 10 V
0
2
3
4
5
6
7
8 9
10
0.07
2
3
4
5
6
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
I D, DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
I D = 2.5 A
V GS = 10 V
1000
V GS = 0 V
T J = 150 ° C
1.4
1.2
1.0
0.8
100
10
T J = 100 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
1
5
10
15
20
25
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
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