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参数资料
| 型号： | NTTD1P02R2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package(-1.45 A, -20 V，双P通道，增强模式，Micro8封装的功率MOSFET) |
| 中文描述： | 1450 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CASE 846A-02, MICRO-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 65K |
| 代理商： | NTTD1P02R2 |
Semiconductor Components Industries, LLC, 2003
December, 2003 Rev. 1
1
Publication Order Number:
NTTD1P02R2/D
NTTD1P02R2
Power MOSFET
1.45 Amps, 20 Volts
PChannel Enhancement Mode
Dual Micro8 Package
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual Micro8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Micro8 Mounting Information Provided
Applications
Power Management in Portable and BatteryPowered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Thermal Resistance
JunctiontoAmbient (Note 1.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 70
°
C
Pulsed Drain Current (Note 3.)
Thermal Resistance
JunctiontoAmbient (Note 2.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 70
°
C
Pulsed Drain Current (Note 3.)
Operating and Storage
Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 20 Vdc, V
GS
= 4.5 Vdc,
Peak I
L
= 3.5 Apk, L = 5.6 mH,
R
G
= 25
)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
1. Minimum FR4 or G10 PCB, Steady State.
2. Mounted onto a 2
″
square FR4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single
sided), Steady State.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
V
DSS
V
GS
20
8.0
V
V
R
θ
JA
P
D
I
D
I
D
I
DM
250
0.50
1.45
1.15
10
°
C/W
W
A
A
A
R
θ
JA
P
D
I
D
I
D
I
DM
T
J
, T
stg
125
1.0
2.04
1.64
16
55 to
+150
35
°
C/W
W
A
A
A
°
C
E
AS
mJ
T
L
260
°
C
Drain 1
Drain 1
Drain 2
Drain 2
(Top View)
8
7
6
5
Source 1
Gate 1
Source 2
Gate 2
1
2
3
4
Device
Package
Shipping
ORDERING INFORMATION
NTTD1P02R2
Micro8
4000/Tape & Reel
Micro8
CASE 846A
STYLE 2
Dual PChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
1
8
YWW
BC
Y
WW = Work Week
BC = Device Code
= Year
1.45 AMPERES
20 VOLTS
160 m @ V
GS
= 4.5
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTTD1P02R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET -1.45 Amps， -20 Volts |
| NTTD1P02R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -1.45 Amps, -20 Volts |
| NTTD1P02R2G | 功能描述:MOSFET -20V -1.45A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTD2P02R2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DSS | 2.4A I(D) | TSSOP |
| NTTD2P02R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET -2.4 Amps， -20 Volts |
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