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参数资料
| 型号： | NTTD4401F |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | FETKY Power MOSFET and Shottky Diode(20V，3.3A双功率MOSFET) |
| 中文描述： | FETKY功率MOSFET和肖特基二极管（20V的，3.3A双功率MOSFET的） |
| 文件页数： | 1/8页 |
| 文件大小： | 182K |
| 代理商： | NTTD4401F |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 4
1
Publication Order Number:
NTTD4401F/D
NTTD4401F
FETKY Power MOSFET
and Shottky Diode
20 V,
3.3 A P
Channel with 20 V,
1.0 A Schottky Diode, Micro8 Package
The FETKY product family incorporates low R
DS(on)
, true logic level
MOSFETs packaged with industry leading, low forward drop, low
leakage Schottky Barrier Diodes to offer high efficiency components in
a space saving configuration. Independent pinouts for TMOS and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
Features
Low V
F
and Low Leakage Schottky Diode
Lower Component Placement and Inventory Costs along with Board
Space Savings
Logic Level Gate Drive – Can be Driven by Logic ICs
Pb
Free Package is Available
Applications
Buck Converter
Synchronous Rectification
Low Voltage Motor Control
Load Management in Battery Packs, Chargers, Cell Phones, and
other Portable Products
MOSFET MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Drain
to
Source Voltage
Gate
to
Source Voltage
Continuous Drain
Current (Note 1)
T
A
= 100
°
C
Power Dissipation
(Note 1)
State
Continuous Drain
Current (Note 2)
T
A
= 100
°
C
Power Dissipation
(Note 2)
State
Pulsed Drain
Current
Operating Junction and
Storage Temperature
Single Pulse Drain
to
Source Avalanche
Energy Starting T
A
= 25
°
C (t
10 s)
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface
mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.172 in sq).
Symbol
V
DSS
V
GS
I
D
Value
20
10
3.3
2.1
1.42
Unit
V
V
A
T
A
= 25
°
C
Steady
T
A
= 25
°
C
P
D
W
T
A
= 25
°
C
I
D
2.4
1.5
0.78
A
Steady
T
A
= 25
°
C
P
D
W
t
= 10 s
I
DM
10
A
T
J
, T
STG
55 to
150
150
°
C
EAS
mJ
T
L
260
°
C
Device
Package
Shipping
ORDERING INFORMATION
NTTD4401FR2
Micro8
4000/Tape & Reel
http://onsemi.com
NTTD4401FR2G
Micro8
(Pb
Free)
4000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
20 V
20 V
100 m @
2.7 V
70 m @
4.5 V
600 mV @ I
F
= 2.0 A
R
DS(on)
Typ
2.0 A
I
D
Max
3.3 A
V
(BR)DSS
MOSFET PRODUCT SUMMARY
SCHOTTKY DIODE SUMMARY
V
R
Max
V
F
Max
I
F
Max
2.7 A
G
D
P
Channel MOSFET
S
C
A
Schottky Diode
Micro8
CASE 846A
1
8
MARKING DIAGRAM &
PIN ASSIGNMENT
BG
WW
= Specific Device Code
= Work Week
= Pb
Free Package
WW
BG
(Note: Microdot may be in either location)
1
8
A A S G
C C D D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTTD4401F_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
| NTTD4401FR2 | 功能描述:MOSFET -20V -3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTD4401FR2G | 功能描述:MOSFET -20V -3.3A P-Channel w/1A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFS3A08P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET .20 V, .14 A, Single P.Channel, 8FL |
| NTTFS3A08PZTAG | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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