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参数资料
| 型号： | NTTD4401F |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | FETKY Power MOSFET and Shottky Diode(20V，3.3A双功率MOSFET) |
| 中文描述： | FETKY功率MOSFET和肖特基二极管（20V的，3.3A双功率MOSFET的） |
| 文件页数： | 4/8页 |
| 文件大小： | 182K |
| 代理商： | NTTD4401F |
NTTD4401F
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
V
GS
=
1.5 V
V
GS
=
1.7 V
V
GS
=
1.9 V
T
J
= 55
°
C
T
J
= 25
°
C
V
GS
=
10 V
V
GS
=
4.5 V
V
GS
=
2.5 V
Figure 1. On
Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On
Resistance vs. Gate
to
Source
Voltage
Figure 4. On
Resistance vs. Drain Current and
Gate Voltage
Figure 5. On
Resistance Variation with
Temperature
Figure 6. Drain
to
Source Leakage Current
vs. Voltage
V
GS
=
2.1 V
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 25
°
C
V
GS
=
2.7 V
V
GS
=
4.5 V
I
D
=
3.3 A
V
GS
=
4.5 V
V
GS
= 0 V
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 100
°
C
V
DS
> =
10 V
150
50
1.6
1.4
25
0
25
75
1.2
1
0.8
0.6
20
0
1000
100
4
8
12
16
10
1
0.1
0.01
V
DS,
DRAIN
TO
SOURCE VOLTAGE (VOLTS)
125
100
50
T
J,
JUNCTION TEMPERATURE (
°
C)
1
0.12
0.1
1.5
2
2.5
3.5
0.08
0.06
0.04
4.5
4
3
2
0.2
0.15
4
6
0.1
0.05
0
8
1
5
4
1.5
2
3
2
0
3
0
4
3
6
2
1
0
8
1
2.5
4
2
10
I
D,
DRAIN CURRENT (AMPS)
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
V
GS
, GATE
TO
SOURCE VOLTAGE (VOLTS)
V
GS,
GATE
TO
SOURCE VOLTAGE (VOLTS)
I
D
I
D
R
D
D
T
S
R
I
D
L
R
D
D
T
S
R
D
D
T
S
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTTD4401F_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
| NTTD4401FR2 | 功能描述:MOSFET -20V -3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTD4401FR2G | 功能描述:MOSFET -20V -3.3A P-Channel w/1A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFS3A08P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET .20 V, .14 A, Single P.Channel, 8FL |
| NTTFS3A08PZTAG | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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