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参数资料
型号： NTTD4401F
厂商： ON SEMICONDUCTOR
英文描述： FETKY Power MOSFET and Shottky Diode(20V，3.3A双功率MOSFET)
中文描述： FETKY功率MOSFET和肖特基二极管（20V的，3.3A双功率MOSFET的）
文件页数： 2/8页
文件大小： 182K
代理商： NTTD4401F
NTTD4401F
http://onsemi.com
2
SCHOTTKY DIODE MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
V
20
V
Average Forward Current (Rated V
R
, T
A
= 100
°
C)
Peak Repetitive Forward Current (Note 3)
I
O
1.0
A
I
FRM
I
FSM
2.0
A
Non
Repetitive Peak Surge Current (Note 4)
20
A
THERMAL RESISTANCE RATINGS
Rating
Symbol
R
JA
R
JA
FET
Schottky
Unit
°
C/W
°
C/W
Max
Junction
to
Ambient – Steady State (Note 5)
88
135
Junction
to
Ambient – Steady State (Note 6)
160
250
MOSFET ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
to
Source Breakdown Voltage
Zero Gate Voltage Drain Current (Note 7)
V
(BR)DSS
I
DSS
V
GS
= 0 V
20
V
V
GS
= 0 V, V
DS
=
16 V
V
GS
= 0 V, T
J
= 125
°
C, V
DS
=
16 V
V
DS
= 0 V, V
GS
=
±
10 V
1.0
A
25
Gate
to
Source Leakage Current
I
GSS
±
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS(TH)
/T
J
V
GS
= V
DS
, I
D
=
250 A
0.5
1.5
V
Negative Threshold
Temperature Coefficient
2.5
mV/
°
C
Drain
to
Source On Resistance
R
DS(on)
V
GS
=
4.5 V, I
D
=
3.3 A
V
GS
=
2.5 V, I
D
=
1.2 A
V
DS
=
10 V, I
D
=
2.7 A
70
90
m
100
150
Forward Transconductance
g
FS
4.2
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
GS
Q
GD
V
GS
= 0 V, f = 1.0 MHz,
V
DS
=
16 V
550
750
pF
Output Capacitance
200
300
Reverse Transfer Capacitance
50
175
Total Gate Charge
V
GS
=
4.5 V, V
DS
=
16 V,
I
D
=
3.3 A
10
18
nC
Gate
to
Source Gate Charge
1.5
3.0
Gate
to
Drain “Miller’’ Charge
5.0
10
SWITCHING CHARACTERISTICS
Turn
On Delay Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
=
4.5 V, V
DD
=
10 V,
D
=
3.3 A, R
G
= 6.0
11
20
ns
Rise Time
35
65
Turn
Off Delay Time
33
60
Fall Time
29
55
DRAIN
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, I
S
=
2.0 A
0.88
1.0
V
ns
Reverse Recovery Time
V
GS
= 0 V, d
IS
/dt = 100 A/ s,
I
S
=
3.3 A
37
50
Charge Time
16
Discharge Time
21
Reverse Recovery Charge
3. Rated V
R
, square wave, 20 kHz, T
A
= 105
°
C.
4. Surge applied at rated load conditions, half
wave, single phase, 60 Hz.
5. Surface
mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
6. Surface
mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq).
7. Body diode leakage current.
0.025
0.05
nC
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相关代理商/技术参数
参数描述
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