参数资料
型号: NTTD1P02R2
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package(-1.45 A, -20 V,双P通道,增强模式,Micro8封装的功率MOSFET)
中文描述: 1450 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: CASE 846A-02, MICRO-8
文件页数: 3/6页
文件大小: 65K
代理商: NTTD1P02R2
NTTD1P02R2
http://onsemi.com
3
V
GS
= 1.5 V
1.7 V
T
J
= 55
°
C
T
J
= 25
°
C
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus
GatetoSource Voltage
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
versus Voltage
T
J
= 25
°
C
T
J
= 100
°
C
I
D
= 1.45 A
T
J
= 25
°
C
T
J
= 25
°
C
V
GS
= 2.7 V
V
GS
= 4.5 V
I
D
= 1.45 A
V
GS
= 4.5 V
V
GS
= 0 V
T
J
= 125
°
C
T
J
= 100
°
C
V
DS
10 V
150
50
1.6
1.4
25
0
25
75
1.2
1
0.8
0.6
20
4
100
8
12
16
10
1
V
DS,
DRAINTOSOURCE VOLTAGE (VOLTS)
125
100
50
T
J,
JUNCTION TEMPERATURE (
°
C)
0
0.3
0.2
0.5
1
1.5
2.5
0.1
0
3.5
3
2
0
0.4
0.3
4
8
0.2
0.1
0
12
0
0.5
2
3
2
0
3.5
0
3
2
1
0
1
2.5
0.25
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
V
GS,
GATETOSOURCE VOLTAGE (VOLTS)
D
D
R
D
D
R
D
L
R
D
D
0.5
0.75
1
1.25
1.5
1.75
1.9 V
2.1 V
2.3 V
2.5 V
2.7 V
2.9 V
3.1 V
3.3 V
3.7 V
4.5 V
8 V
1
1.5
3
2
6
10
R
D
D
V
GS
= 2.5 V
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