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| 型号： | NTTD4401FR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.4A 8MICRO |
| 产品变化通告： | Product Discontinuation 27/Jun/2007 |
| 标准包装： | 10 |
| 系列： | FETKY™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 3.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 16V |
| 功率 - 最大： | 780mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | Micro8? |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTTD4401FR2OSCT |
NTTD4401F
SCHOTTKY DIODE MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Rating
Peak Repetitive Reverse Voltage
Average Forward Current (Rated V R , T A = 100 ° C)
Peak Repetitive Forward Current (Note 3)
Non?Repetitive Peak Surge Current (Note 4)
Symbol
V
I O
I FRM
I FSM
Value
20
1.0
2.0
20
Unit
V
A
A
A
THERMAL RESISTANCE RATINGS
FET
Schottky
Rating
Symbol
Max
Unit
Junction?to?Ambient – Steady State (Note 5)
Junction?to?Ambient – Steady State (Note 6)
R q JA
R q JA
88
160
135
250
° C/W
° C/W
MOSFET ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Zero Gate Voltage Drain Current (Note 7)
V (BR)DSS
I DSS
V GS = 0 V
V GS = 0 V, V DS = ?16 V
?20
?
?
?
?
?1.0
V
m A
V GS = 0 V, T J = 125 ° C, V DS = ?16 V
?
?
?25
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 10 V
?
?
± 100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
Negative Threshold
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ?250 m A
?
?0.5
?
?
2.5
?1.5
?
V
mV/ ° C
Temperature Coefficient
Drain?to?Source On Resistance
R DS(on)
V GS = ?4.5 V, I D = ?3.3 A
?
70
90
m W
V GS = ?2.5 V, I D = ?1.2 A
?
100
150
Forward Transconductance
g FS
V DS = ?10 V, I D = ?2.7 A
?
4.2
?
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
?
550
750
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = ?16 V
?
?
200
50
300
175
Total Gate Charge
Q G(TOT)
?
10
18
nC
Gate?to?Source Gate Charge
Gate?to?Drain “Miller ’’ Charge
Q GS
Q GD
V GS = ?4.5 V, V DS = ?16 V,
I D = ?3.3 A
?
?
1.5
5.0
3.0
10
SWITCHING CHARACTERISTICS
Turn?On Delay Time
t d(ON)
?
11
20
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ?4.5 V, V DD = ?10 V,
I D = ?3.3 A, R G = 6.0 W
?
?
?
35
33
29
65
60
55
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V SD
t RR
t a
t b
Q RR
V GS = 0 V, I S = ?2.0 A
V GS = 0 V, d IS /dt = 100 A/ m s,
I S = ?3.3 A
?
?
?
?
?
?
?0.88
37
16
21
0.025
?1.0
50
?
?
0.05
V
ns
nC
3.
4.
5.
6.
7.
Rated V R , square wave, 20 kHz, T A = 105 ° C.
Surge applied at rated load conditions, half?wave, single phase, 60 Hz.
Surface?mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Surface?mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq).
Body diode leakage current.
http://onsemi.com
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