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参数资料
| 型号： | NTTFS4932NTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 11A 8WDFN |
| 标准包装： | 1,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3111pF @ 15V |
| 功率 - 最大： | 850mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WDFN（3.3x3.3） |
| 包装： | 带卷 (TR) |
| 其它名称： | NTTFS4932NTAG-ND NTTFS4932NTAGOSTR |
NTTFS4932N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE C
2X
0.10 C
0.10 C
8X
D
D1
8 7 6 5
1 2 3 4
TOP VIEW
SIDE VIEW
0.20 C
A
B 2X
E1 E
c
A
DETAIL A
0.20 C
6X
e
DETAIL A
4X
q
A1
C
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.70 0.75 0.80 0.028 0.030 0.031
A1 0.00 *** 0.05 0.000 *** 0.002
b 0.23 0.30 0.40 0.009 0.012 0.016
c 0.15 0.20 0.25 0.006 0.008 0.010
D 3.30 BSC 0.130 BSC
D1 2.95 3.05 3.15 0.116 0.120 0.124
D2 1.98 2.11 2.24 0.078 0.083 0.088
E 3.30 BSC 0.130 BSC
E1 2.95 3.05 3.15 0.116 0.120 0.124
E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 0.23 0.30 0.40 0.009 0.012 0.016
e 0.65 BSC 0.026 BSC
G 0.30 0.41 0.51 0.012 0.016 0.020
K 0.64 *** *** 0.025 *** ***
L 0.30 0.43 0.56 0.012 0.017 0.022
L1 0.06 0.13 0.20 0.002 0.005 0.008
M 1.40 1.50 1.60 0.055 0.059 0.063
q 0 ° *** 12 ° 0 ° *** 12 °
0.10
0.05
C A ? B
C
4X L
14
e/2
K
SOLDERING FOOTPRINT*
8X
0.42 0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
E2
E3
M
G
8 5
D2
BOTTOM VIEW
L1
0.75
0.57
3.60
2.30
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb * Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTTFS4932N/D
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| NTTFS4932NTWG | 功能描述:MOSFET 30V 79A 4 mOhm Single N-Chan u8FL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFS4937N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 75 A, Single N−Channel, 8FL |
| NTTFS4937NTAG | 功能描述:MOSFET 30V 75A 4.5 mOhm Single N-Chan u8FL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFS4937NTWG | 功能描述:MOSFET 30V 75A 4.5 mOhm Single N-Chan u8FL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFS4939N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 52 A, Single N−Channel, 8FL |
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