- 您现在的位置：买卖IC网 > Datasheet目录493 > NTTFS5116PLTAG (ON Semiconductor)MOSFET PWR P-CH 60V 5.7A 8-WDFN Datasheet资料下载
参数资料
| 型号： | NTTFS5116PLTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR P-CH 60V 5.7A 8-WDFN |
| 标准包装： | 1,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 52 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1258pF @ 30V |
| 功率 - 最大： | 3.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WDFN（3.3x3.3） |
| 包装： | 带卷 (TR) |
| 其它名称： | NTTFS5116PLTAG-ND NTTFS5116PLTAGOSTR |
NTTFS5116PL
Power MOSFET
? 60 V, ? 20 A, 52 m W
Features
? Low R DS(on)
? Fast Switching
? These Devices are Pb ? Free and are RoHS Compliant
http://onsemi.com
Applications
? Load Switches
? DC Motor Control
? DC ? DC Conversion
V (BR)DSS
? 60 V
R DS(on) MAX
52 m W @ ? 10 V
72 m W @ ? 4.5 V
I D MAX
? 20 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol
Drain ? to ? Source Voltage V DSS
Value
? 60
Unit
V
P ? Channel MOSFET
D (5 ? 8)
Gate ? to ? Source Voltage
V GS
± 20
V
Continuous Drain
Current R q JA (Note 1)
T A = 25 ° C
T A = 100 ° C
I D
? 5.7
? 4.0
A
G (4)
Power Dissipation R q JA
(Note 1)
Continuous Drain
Current R q JC (Note 1)
Steady
State
T A = 25 ° C
T A = 100 ° C
T C = 25 ° C
T C = 100 ° C
P D
I D
3.2
1.6
? 20
? 14
W
A
S (1,2,3)
MARKING DIAGRAM
R q JC (Note 1)
Power Dissipation T C = 25 ° C
T C = 100 ° C
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
P D
I DM
T J ,
T stg
40
20
? 76
? 55 to
+175
W
A
° C
1
WDFN8
( m 8FL)
CASE 511AB
1
S
S
S
G
5116
AYWW G
G
D
D
D
D
Source Current (Body Diode)
I S
? 20
A
5116
= Specific Device Code
I AS
30
A
Single Pulse Drain ? to ? Source Ava- L = 0.1 mH E AS 45 mJ
lanche Energy
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol
Value
Unit
Device
NTTFS5116PLTAG
Package
WDFN8
(Pb ? Free)
Shipping ?
1500/Tape & Reel
Junction ? to ? Case – Steady
State (Note 1)
R q JC
3.8
° C/W
NTTFS5116PLTWG
WDFN8
(Pb ? Free)
5000/Tape & Reel
Junction ? to ? Ambient – Steady R q JA 47
State (Note 1)
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
November, 2011 ? Rev. 1
1
Publication Order Number:
NTTFS5116PL/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTTFS5811NLTWG | MOSFET N-CH 40V 53.6A 8DFN |
| NTTFS5820NLTWG | MOSFET N-CH 60V 37A 8DFN |
| NTTFS5826NLTWG | MOSFET PWR N-CH 60V 20A 8-WDFN |
| NTTS2P02R2 | MOSFET P-CH 20V 2.4A 8MICRO |
| NTTS2P03R2 | MOSFET P-CH 30V 2.1A 8MICRO |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTTFS5116PLTWG | 功能描述:MOSFET PFET U8FL 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFS5811NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 53 A, 6.4 mΩ |
| NTTFS5811NLTAG | 功能描述:MOSFET Single N-CH 40V 53A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFS5811NLTWG | 功能描述:MOSFET Single N-CH 40V 53A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFS5820NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 V, 37 A, 11.5 m |
发布紧急采购，3分钟左右您将得到回复。