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| 型号： | NTTFS5820NLTWG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 37A 8DFN |
| 标准包装： | 5,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.5 毫欧 @ 8.7A，10V |
| Id 时的 Vgs(th)（最大）： | 2.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1462pF @ 25V |
| 功率 - 最大： | 2.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WDFN（3x3） |
| 包装： | 带卷 (TR) |
NTTFS5820NL
Power MOSFET
60 V, 37 A, 11.5 m W
Features
? Low R DS(on)
? Low Capacitance
? Optimized Gate Charge
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
11.5 m W @ 10 V
15 m W @ 4.5 V
I D MAX
37 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
60
± 20
V
V
N ? Channel MOSFET
D (5 ? 8)
Continuous Drain
Current R q JA (Note 1)
T A = 25 ° C
T A = 100 ° C
I D
11
7
A
Power Dissipation R q JA
(Note 1)
Continuous Drain
Current R q JC (Note 1)
Steady
State
T A = 25 ° C
T A = 100 ° C
T C = 25 ° C
T C = 100 ° C
P D
I D
2.7
1.1
37
24
W
A
G (4)
S (1,2,3)
MARKING DIAGRAM
R q JC (Note 1)
Power Dissipation T C = 25 ° C
T C = 100 ° C
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
P D
I DM
T J ,
T stg
I S
33
13
149
? 55 to
+150
37
W
A
° C
A
1
WDFN8
( m 8FL)
CASE 511AB
5820
A
1
S
S 5820
S AYWW G
G G
= Specific Device Code
= Assembly Location
D
D
D
D
Single Pulse Drain ? to ? Source Ava-
lanche Energy
L = 0.1 mH
E AS
I AS
48
31
mJ
A
Y
WW
G
= Year
= Work Week
= Pb ? Free Package
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L
260
° C
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device Package Shipping ?
THERMAL RESISTANCE MAXIMUM RATINGS
NTTFS5820NLTAG
WDFN8
(Pb ? Free)
1500 / Tape & Reel
Parameter
Junction ? to ? Case – Steady
State (Note 1)
Junction ? to ? Ambient – Steady
State (Note 1)
Symbol
R q JC
R q JA
Value
3.8
46.7
Unit
° C/W
NTTFS5820NLTWG WDFN8 5000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
? Semiconductor Components Industries, LLC, 2011
November, 2011 ? Rev. 1
1
Publication Order Number:
NTTFS5820NL/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTTFS5826NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NTTFS5826NL 60 V, 24 m, Single Na??Channel, 8FL |
| NTTFS5826NLTAG | 功能描述:MOSFET NFET U8FL 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFS5826NLTWG | 功能描述:MOSFET NFET U8FL 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFSC4821NTAG | 功能描述:IGBT 晶体管 NFETU8FL 30V 57A 10.8M Ohm RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| NTTFSC4823NTAG | 功能描述:IGBT 晶体管 NFETU8FL 30V 50A 17.5MOHM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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