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| 型号： | NTTS2P02R2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.4A 8MICRO |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 4,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 2.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 550pF @ 16V |
| 功率 - 最大： | 780mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | Micro8? |
| 包装： | 带卷 (TR) |
| 其它名称： | NTTS2P02R2OS |
NTTS2P02R2
Power MOSFET
?2.4 Amps, ?20 Volts
Single P ? Channel Micro8 t
Features
http://onsemi.com
?
?
?
?
?
?
?
Ultra Low R DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Micro ? 8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Micro8 Mounting Information Provided
Pb ? Free Package is Available
? 2.4 AMPERES
? 20 VOLTS
R DS(on) = 90 m W
Single P ? Channel
D
Applications
? Power Management in Portable and Battery ? Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
G
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Value
Unit
S
AD G
1
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ?
Junction ? to ? Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 3)
Thermal Resistance ?
Junction ? to ? Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 3)
Operating and Storage
Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = ? 20 Vdc, V GS = ? 4.5 Vdc,
Peak I L = ? 5.0 Apk, L = 28 mH,
R G = 25 W )
V DSS
V GS
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
T J , T stg
EAS
? 20
± 8.0
160
0.78
? 2.4
? 1.92
? 20
88
1.42
? 3.25
? 2.6
? 30
? 55 to
+150
350
V
V
° C/W
W
A
A
A
° C/W
W
A
A
A
° C
mJ
MARKING DIAGRAM &
PIN ASSIGNMENT
D D D D
8
8
WW
1
Micro8 G
CASE 846A
STYLE 1
S S S G
AD = Specific Device Code
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T L
260
° C
Device
Package
Shipping ?
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR ? 4 or G ? 10 PCB, Steady State.
2. Mounted onto a 2 ″ square FR ? 4 Board
(1 IN SQ, 2 oz Cu 0.06 ″ thick single sided), Steady State.
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
NTTS2P02R2 Micro8 4000/Tape & Reel
NTTS2P02R2G Micro8 4000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 5
1
Publication Order Number:
NTTS2P02R2/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTTS2P02R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET -2.4 Amps， -20 Volts |
| NTTS2P02R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -2.4 Amps, -20 Volts |
| NTTS2P02R2G | 功能描述:MOSFET 20V 2.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTS2P03R2 | 功能描述:MOSFET -30V -2.48A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTS2P03R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET -2.48 Amps， -30 Volts |
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