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| 型号： | NTUD3129PT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V SOT-963 |
| 产品变化通告： | Product Discontinuation 01/Oct/2008 |
| 标准包装： | 8,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 140mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 100mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 12pF @ 15V |
| 功率 - 最大： | 125mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-963 |
| 供应商设备封装： | SOT-963 |
| 包装： | 带卷 (TR) |
NTUD3129P
Small Signal MOSFET
-20 V, -180 mA, Dual P-Channel,
1.0 x 1.0 mm SOT-963 Package
Features
? Dual P-Channel MOSFET
? Offers a Low R DS(ON) Solution in the Ultra Small 1.0 x 1.0 mm
Package
? 1.5V Gate Voltage Rating
? Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
? These are Pb-Free Devices
Applications
? General Purpose Interfacing Switch
? Optimized for Power Management in Ultra Portable Equipment
V (BR)DSS
-20 V
G1
http://onsemi.com
R DS(ON) MAX
5.0 W @ -4.5 V
7.0 W @ -2.5 V
10 W @ -1.8 V
14 W @ -1.5 V
D1
G2
I D Max
-0.18 A
D2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Value
Unit
P-Channel
Drain-to-Source Voltage
V DSS
-20
V
S1
MOSFET
S2
Gate-to-Source Voltage
V GS
± 8
V
Continuous Drain
Current (Note 1)
Steady
State
t v 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
-140
-100
-180
mA
S 1 1
PINOUT: SOT-963
6 D 1
Power Dissipation
Steady
-125
(Note 1)
State
t v 5s
T A = 25 ° C
P D
-200
mW
G 1 2
5 G 2
Pulsed Drain Current
t p = 10 m s
I DM
-600
mA
Operating Junction and Storage Temperature
T J ,
-55 to
° C
Source Current (Body Diode) (Note 2)
T STG
I S
150
-200
mA
D 2
3
4 S 2
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L
260
° C
Top View
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING
DIAGRAM
1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%
SOT-963
CASE 527AA
1
RM G
R
M
G
= Specific Device Code
= Date Code
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 0
1
Publication Order Number:
NTUD3129P/D
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTUD3169CZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 220 mA / −200 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package |
| NTUD3169CZT5G | 功能描述:MOSFET 20V Mosfet Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTUD3170NZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 220 mA, Dual N−Channel, 1.0 mm x 1.0 mm SOT−963 Package |
| NTUD3170NZT5G | 功能描述:MOSFET 20V Trench N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTUD3171PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −200 mA, Dual P−Channel, 1.0 x 1.0 mm SOT−963 Package |
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