- 您现在的位置：买卖IC网 > Datasheet目录493 > NTUD3129PT5G (ON Semiconductor)MOSFET P-CH DUAL 20V SOT-963 Datasheet资料下载
参数资料
| 型号： | NTUD3129PT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V SOT-963 |
| 产品变化通告： | Product Discontinuation 01/Oct/2008 |
| 标准包装： | 8,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 140mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 100mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 12pF @ 15V |
| 功率 - 最大： | 125mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-963 |
| 供应商设备封装： | SOT-963 |
| 包装： | 带卷 (TR) |
NTUD3129P
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t = 5 s (Note 3)
Symbol
R q JA
Max
1000
600
Unit
° C/W
3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = -250 m A
-20
V
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = -5.0 V
V GS = 0 V, V DS = -16 V
T J = 25 ° C
T J = 85 ° C
T J = 25 ° C
-50
-200
-100
nA
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 5.0 V
± 100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Drain-to-Source On Resistance
V GS(TH)
R DS(ON)
V GS = V DS , I D = -250 m A
V GS = -4.5 V, I D = -100 mA
-0.4
4.0
-1.0
5.0
V
V GS = -2.5 V, I D = -50 mA
5.0
7.0
V GS = -1.8 V, I D = -20 mA
V GS = -1.5 V, I D = -10 mA
V GS = -1.2 V, I D = -1.0 mA
6.5
7.5
11.5
10
14
W
Forward Transconductance
g FS
V DS = -5.0 V, I D = -125 mA
0.26
S
Source-Drain Diode Voltage
V SD
V GS = 0 V, I D = -10 mA
-0.65
-1.0
V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
12
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
f = 1 MHz, V GS = 0 V
V DS = -15 V
2.7
1.0
pF
SWITCHING CHARACTERISTICS, V GS = 4.5 V (Note 4)
Turn-On Delay Time
t d(ON)
20
Rise Time
Turn-Of f Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = -4.5 V, V DD = -15 V,
I D = -180 mA, R G = 2.0 W
37
112
97
ns
4. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| NTUD3169CZT5G | MOSFET N/P-CH 20V SOT-963 |
| NTUD3170NZT5G | MOSFET N-CH DUAL 20V SOT-963 |
| NTUD3171PZT5G | MOSFET P-CH DUAL 20V SOT-963 |
| NTY100N10G | MOSFET N-CH 100V 123A TO-264 |
| NTZD3152PT5G | MOSFET P-CHAN DUAL 20V SOT-563 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTUD3169CZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 220 mA / −200 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package |
| NTUD3169CZT5G | 功能描述:MOSFET 20V Mosfet Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTUD3170NZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 220 mA, Dual N−Channel, 1.0 mm x 1.0 mm SOT−963 Package |
| NTUD3170NZT5G | 功能描述:MOSFET 20V Trench N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTUD3171PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −200 mA, Dual P−Channel, 1.0 x 1.0 mm SOT−963 Package |
发布紧急采购，3分钟左右您将得到回复。