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| 型号： | NTUD3169CZT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V SOT-963 |
| 产品变化通告： | Wire Bond Change 01/Dec/2010 |
| 标准包装： | 8,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 220mA，200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 100mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 12.5pF @ 15V |
| 功率 - 最大： | 125mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-963 |
| 供应商设备封装： | SOT-963 |
| 包装： | 带卷 (TR) |
| 其它名称： | NTUD3169CZT5G-ND NTUD3169CZT5GOSTR |
NTUD3169CZ
Small Signal MOSFET
20 V, 220 mA / ? 200 mA, Complementary,
1.0 x 1.0 mm SOT ? 963 Package
Features
? Complementary MOSFET Device
? Offers a Low R DS(on) Solution in the Ultra Small 1.0x1.0 mm
Package
? 1.5 V Gate Voltage Rating
? Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
? This is a Pb ? Free Device
Applications
? Load Switch with Level Shift
? Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
V (BR)DSS
N ? Channel
20 V
P ? Channel
20 V
http://onsemi.com
R DS(on) Max
1.5 W @ 4.5 V
2.0 W @ 2.5 V
3.0 W @ 1.8 V
4.5 W @ 1.5 V
5.0 W @ ? 4.5 V
6.0 W @ ? 2.5 V
7.0 W @ ? 1.8 V
10 W @ ? 1.5 V
PINOUT: SOT ? 963
I D Max
0.22 A
? 0.2 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
V DSS
20
V
S 1
1
6
D 1
Gate ? to ? Source Voltage
V GS
± 8
V
N ? Channel
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
220
160
G 1
2
5
G 2
P ? Channel
Continuous Drain
Current (Note 1)
t v 5s
Steady
State
t v 5s
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
280
? 200
? 140
? 250
mA
D 2
3
Top View
4
S 2
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
125
mW
MARKING
DIAGRAM
t v 5s
200
Pulsed Drain Current
N ? Channel
P ? Channel
t p = 10 m s
I DM
800
? 600
mA
SOT ? 963
CASE 527AD
1
2M G
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T J ,
T STG
I S
T L
? 55 to
150
200
260
° C
mA
° C
2
M
G
= Specific Device Code
= Date Code
= Pb ? Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using the minimum recommended pad size,
1 oz. Cu.
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%
ORDERING INFORMATION
Device Package Shipping ?
NTUD3169CZT5G SOT ? 963 8000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2008
August, 2008 ? Rev. 0
1
Publication Order Number:
NTUD3169CZ/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTUD3170NZT5G | MOSFET N-CH DUAL 20V SOT-963 |
| NTUD3171PZT5G | MOSFET P-CH DUAL 20V SOT-963 |
| NTY100N10G | MOSFET N-CH 100V 123A TO-264 |
| NTZD3152PT5G | MOSFET P-CHAN DUAL 20V SOT-563 |
| NTZD3154NT5G | MOSFET N-CHAN DUAL 20V SOT-563 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTUD3170NZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 220 mA, Dual N−Channel, 1.0 mm x 1.0 mm SOT−963 Package |
| NTUD3170NZT5G | 功能描述:MOSFET 20V Trench N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTUD3171PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −200 mA, Dual P−Channel, 1.0 x 1.0 mm SOT−963 Package |
| NTUD3171PZT5G | 功能描述:MOSFET 20V Trench P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTUD3174NZT5G | 功能描述:MOSFET NFET SOT963 20V 280MA TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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