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| 型号： | NTY100N10G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 123A TO-264 |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 标准包装： | 25 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 123A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 350nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 10110pF @ 25V |
| 功率 - 最大： | 313W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264 |
| 包装： | 管件 |
NTY100N10
Preferred Device
Power MOSFET 123 A,
100 V N?Channel
Enhancement?Mode TO264
Package
http://onsemi.com
Features
? Source ? to ? Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Avalanche Energy Specified
? IDSS and R DS(on) Specified at Elevated Temperature
? Pb ? Free Package is Available*
Applications
? PWM Motor Control
? Power Supplies
? Converters
123 A, 100 V
9 m W @ V GS = 10 V (Typ)
N ? Channel
D
G
S
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating
Drain ? Source Voltage
Drain ? Gate Voltage (R GS = 1 M W )
Symbol
V DSS
V DGR
Value
100
100
Unit
V
V
MARKING DIAGRAM &
PIN ASSIGNMENT
Gate ? Source Voltage
? Continuous
? Non ? Repetitive (t p v 10 ms)
Drain Current (Note 1)
? Continuous @ T C = 25 ° C
? Pulsed
Total Power Dissipation (Note 1)
Derate above 25 ° C
V GS
V GSM
I D
I DM
P D
$ 20
$ 40
123
369
313
2.5
V
V
A
A
Watts
W/ ° C
1
2
3
TO ? 264
CASE 340G
STYLE 1
NTY100N10
AYYWWG
1 2 3
G D S
Operating and Storage Temperature Range
T J , T stg
? 55 to
150
° C
A
YY
= Assembly Location
= Year
Single Pulse Drain ? to ? Source
Avalanche Energy ? Starting T J = 25 ° C
(V DD = 80 Vdc, V GS = 10 Vdc,
Peak I L = 100 Apk, L = 0.1 mH, R G = 25 W )
Thermal Resistance ? Junction to Case
? Junction to Ambient
E AS
R q JC
R q JA
500
0.4
25
mJ
° C/W
WW = Work Week
G = Pb ? Free Package
ORDERING INFORMATION
Device Package Shipping
Maximum Lead Temperature for Soldering
Purposes, 0.125 in from case for 10 seconds
T L
260
° C
NTY100N10
NTY100N10G
TO ? 264
TO ? 264
25 Units/Rail
25 Units/Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 m s, Duty ? Cycle = 2%.
(Pb ? Free)
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 2
1
Publication Order Number:
NTY100N10/D
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