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| 型号： | NTZD5110NT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 60V SOT563 |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 8,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 294mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.6 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 24.5pF @ 20V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 带卷 (TR) |
NTZD5110N
Small Signal MOSFET
60 V, 310 mA, Dual N?Channel
with ESD Protection, SOT?563
Features
? Low R DS(on) Improving System Efficiency
? Low Threshold Voltage
? ESD Protected Gate
? Small Footprint 1.6 x 1.6 mm
? These are Pb?Free Devices
Applications
V (BR)DSS
60
http://onsemi.com
R DS(on) MAX
1.6 W @ 10 V
2.5 W @ 4.5 V
I D Max
310 mA
?
?
?
?
Load/Power Switches
Driver Circuits: Relays, Lamps, Displays, Memories, etc.
Battery Management/Battery Operated Systems
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
D1
D2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted.)
G1
G2
Parameter
Symbol
Value
Unit
Drain?to?Source Voltage
Gate?to?Source Voltage
V DSS
V GS
60
± 20
V
V
S1
N?Channel
MOSFET
S2
T A = 85 ° C
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady T A = 25 ° C
State
Steady State
I D
P D
294
212
250
mA
mW
6
MARKING
DIAGRAM
Continuous Drain
Current (Note 1)
t v 5 s
T A = 25 ° C
T A = 85 ° C
I D
310
225
mA
1
SOT?563
CASE 463A
S7M G
G
Power Dissipation
(Note 1)
t v 5s
P D
280
mW
S7 = Specific Device Code
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I DM
T J ,
590
?55 to
mA
° C
M = Date Code
(Note: Microdot may be in either location)
T STG
150
Source Current (Body Diode)
I S
350
mA
PINOUT: SOT?563
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
Gate?Source ESD Rating (HBM, Method 3015)
T L
ESD
260
1800
° C
V
S 1 1
6 D 1
THERMAL RESISTANCE RATINGS
Parameter
Junction?to?Ambient – Steady State (Note 1)
Junction?to?Ambient – t v 5 s (Note 1)
Symbol
R q JA
Max
500
447
Unit
° C/W
G 1 2
D 2
3
5 G 2
4 S 2
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Top View
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
December, 2013 ? Rev. 6
1
Publication Order Number:
NTZD5110N/D
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