参数资料
型号: NTZD5110NT5G
厂商: ON Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET N-CH DUAL 60V SOT563
产品变化通告: Product Obsolescence 21/Jan/2010
标准包装: 8,000
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 294mA
开态Rds(最大)@ Id, Vgs @ 25° C: 1.6 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 0.7nC @ 4.5V
输入电容 (Ciss) @ Vds: 24.5pF @ 20V
功率 - 最大: 250mW
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: SOT-563
包装: 带卷 (TR)
NTZD5110N
TYPICAL CHARACTERISTICS
1.6
1.2
V GS = 10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
1.2
0.8
3.5 V
0.8
0.4
3.0 V
2.5 V
0.4
T J = 25 ° C
0
0
T J = 125 ° C
T J = ?55 ° C
0
2
4
6
0
2
4
6
3.2
V DS , DRAIN?TO?SOURCE VOLTAGE (V)
Figure 1. On?Region Characteristics
3.2
V GS , GATE?TO?SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
2.8
2.4
2.0
1.6
1.2
V GS = 4.5 V
T J = 125 ° C
T J = 85 ° C
T J = 25 ° C
T J = ?55 ° C
2.8
2.4
2.0
1.6
1.2
V GS = 10 V
T J = 125 ° C
T J = 85 ° C
T J = 25 ° C
T J = ?55 ° C
0.8
0.4
0
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
2.4
I D , DRAIN CURRENT (A)
Figure 3. On?Resistance vs. Drain Current and
Temperature
2.2
I D , DRAIN CURRENT (A)
Figure 4. On?Resistance vs. Drain Current and
Temperature
I D = 0.2 A
2.0
I D = 500 mA
1.8
V GS = 4.5 V
1.6
1.4
V GS = 10 V
1.2
I D = 200 mA
1.0
0.8
0.4
0.6
2
4
6
8
10
?50
?25
0
25
50
75
100
125
150
V GS , GATE?TO?SOURCE VOLTAGE (V)
Figure 5. On?Resistance vs. Gate?to?Source
Voltage
http://onsemi.com
3
T J , JUNCTION TEMPERATURE ( ° C)
Figure 6. On?Resistance Variation with
Temperature
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