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| 型号： | NTZD5110NT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 60V SOT563 |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 8,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 294mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.6 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 24.5pF @ 20V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 带卷 (TR) |
NTZD5110N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
?
60
?
?
71
?
?
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 60 V
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
T J = 25 ° C
?
?
?
?
?
?
1.0
500
100
m A
nA
V DS = 50 V
T J = 85 ° C
?
?
100
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
V DS = 0 V, V GS = " 10 V
V DS = 0 V, V GS = " 5.0 V
?
?
?
?
?
?
" 10
450
150
m A
nA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain?to?Source On Resistance
Forward Transconductance
V GS(TH)
V GS(TH) /T J
R DS(on)
g FS
V GS = V DS , I D = 250 m A
?
V GS = 10 V, I D = 500 mA
V GS = 4.5 V, I D = 200 mA
V DS = 5.0 V, I D = 200 mA
1.0
?
?
?
?
?
4.0
1.19
1.33
80
2.5
?
1.6
2.5
?
V
mV/ ° C
W
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
?
24.5
?
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 20 V
?
?
4.2
2.2
?
?
Total Gate Charge
Q G(TOT)
?
0.7
?
nC
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 10 V;
I D = 200 mA
?
?
?
0.1
0.3
0.1
?
?
?
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
t d(ON)
?
12
?
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 10 V, V DD = 30 V,
I D = 200 mA, R G = 10 W
?
?
?
7.3
63.7
30.6
?
?
?
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 200 mA
T J = 25 ° C
T J = 85 ° C
?
?
0.8
0.7
1.2
?
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface?mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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