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| 型号： | NTZS3151PT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 860MA SOT-563 |
| 产品变化通告： | Product Discontinuation 04/April/2008 |
| 标准包装： | 8,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 860mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 150 毫欧 @ 950mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 458pF @ 16V |
| 功率 - 最大： | 170mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 带卷 (TR) |
NTZS3151P
Small Signal MOSFET
? 20 V, ? 950 mA, P ? Channel SOT ? 563
Features
?
?
?
?
Low R DS(on) Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) Typ
120 m W @ ? 4.5 V
144 m W @ ? 2.5 V
I D Max
? 950 mA
Applications
? Load/Power Switches
? Battery Management
? Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted.)
G
195 m W @ ? 1.8 V
P ? Channel MOSFET
D
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
V DSS
? 20
V
S
T A = 70 ° C
Gate ? to ? Source Voltage
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady T A = 25 ° C
State
Steady State
V GS
I D
P D
± 8.0
? 860
? 690
170
V
mA
mW
6
1
SOT ? 563 ? 6
CASE 463A
MARKING
DIAGRAM
TX M G
G
Continuous Drain Current
(Note 1)
t v 5s
T A = 25 ° C
T A = 70 ° C
I D
? 950
? 760
mA
TX = Specific Device Code
M = Date Code
Power Dissipation
(Note 1)
t v 5s
P D
210
mW
G = Pb ? Free Package
(Note: Microdot may be in either location)
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
THERMAL RESISTANCE RATINGS
I DM
T J ,
T STG
I S
T L
? 4.0
? 55 to
150
? 360
260
A
° C
mA
° C
D 1
D 2
PINOUT: SOT ? 563
6 D
5 D
Parameter
Symbol
Max
Unit
Junction ? to ? Ambient – Steady State (Note 1)
R q JA
720
° C/W
G
3
4 S
Junction ? to ? Ambient – t v 5 s (Note 1) R q JA 600
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in. sq. pad size
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
Top View
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 3
1
Publication Order Number:
NTZS3151P/D
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