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| 型号： | NTZS3151PT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 860MA SOT-563 |
| 产品变化通告： | Product Discontinuation 04/April/2008 |
| 标准包装： | 8,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 860mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 150 毫欧 @ 950mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 458pF @ 16V |
| 功率 - 最大： | 170mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 带卷 (TR) |
NTZS3151P
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
? 20
? 13
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = ? 20 V
T J = 25 ° C
T J = 125 ° C
? 1.0
? 5.0
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 8.0 V
" 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
Drain ? to ? Source On Resistance
V GS(TH)
V GS(TH) /T J
R DS(on)
V GS = V DS , I D = ? 250 m A
V GS = ? 4.5 V, I D = ? 950 mA
V GS = ? 4.5 V, I D = ? 770 mA
V GS = ? 2.5 V, I D = ? 670 mA
? 0.45
2.4
120
112
144
? 1.0
150
142
200
V
mV/ ° C
m W
V GS = ? 1.8 V, I D = ? 200 mA
195
240
Forward Transconductance
g FS
V DS = ? 10 V, I D = ? 810 mA
3.1
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
458
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = ? 16 V
61
38
Total Gate Charge
Q G(TOT)
5.6
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 10 V;
I D = ? 770 mA
0.6
0.9
1.2
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(ON)
5.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 10 V,
I D = ? 950 mA, R G = 6.0 W
12
23.7
18
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = ? 360 mA
T J = 25 ° C
T J = 125 ° C
? 0.64
? 0.5
? 0.9
V
Reverse Recovery Time
t RR
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = ? 360 mA
10.5
ns
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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