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参数资料
| 型号： | NTZS3151PT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 860MA SOT-563 |
| 产品变化通告： | Product Discontinuation 04/April/2008 |
| 标准包装： | 8,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 860mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 150 毫欧 @ 950mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 458pF @ 16V |
| 功率 - 最大： | 170mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 带卷 (TR) |
NTZS3151P
PACKAGE DIMENSIONS
SOT ? 563, 6 LEAD
CASE 463A
ISSUE F
D
? X ?
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
6
1
e
5
2
4
3
E
? Y ?
b 65 PL
0.08 (0.003)
M
X Y
H E
C
DIM
A
b
C
D
E
e
L
H E
MILLIMETERS
MIN NOM MAX
0.50 0.55 0.60
0.17 0.22 0.27
0.08 0.12 0.18
1.50 1.60 1.70
1.10 1.20 1.30
0.5 BSC
0.10 0.20 0.30
1.50 1.60 1.70
INCHES
MIN NOM MAX
0.020 0.021 0.023
0.007 0.009 0.011
0.003 0.005 0.007
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
1.35
0.0531
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm
inches
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTSZ3151P/D
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