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| 型号： | NVD5117PLT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 61A DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 61A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 29A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 85nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4800pF @ 25V |
| 功率 - 最大： | 4.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 其它名称： | NVD5117PLT4GOSDKR |
NVD5117PL
Power MOSFET
? 60 V, 16 m W , ? 61 A, Single P ? Channel
Features
? Low R DS(on) to Minimize Conduction Losses
? High Current Capability
? Avalanche Energy Specified
? AEC ? Q101 Qualified
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
? 60 V
http://onsemi.com
R DS(on)
16 m W @ ? 10 V
22 m W @ ? 4.5 V
I D
? 61 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
? 60
Unit
V
S
Gate ? to ? Source Voltage
Continuous Drain Cur-
rent R q JC (Note 1)
Power Dissipation R q JC
(Note 1)
Steady
State
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
T C = 100 ° C
V GS
I D
P D
" 20
? 61
? 43
118
59
V
A
W
G
D
P ? Channel
T A = 25 ° C
Continuous Drain Cur-
rent R q JA (Notes 1 & 2)
Power Dissipation R q JA
(Notes 1 & 2)
Pulsed Drain Current
Current Limited by
Package (Note 3)
T A = 25 ° C
Steady T A = 100 ° C
State
T A = 100 ° C
T A = 25 ° C, t p = 10 m s
T A = 25 ° C
I D
P D
I DM
I Dmaxpkg
? 11
? 8
4.1
2.1
? 419
60
A
W
A
A
4
1 2
3
DPAK
CASE 369C
STYLE 2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L(pk) = 40 A, L = 0.3 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J , T stg
I S
E AS
T L
? 55 to
175
? 118
240
260
° C
A
mJ
° C
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Y
WW
5117L
2
1 Drain 3
Gate Source
= Year
= Work Week
= Device Code
Junction ? to ? Case ? Steady State (Drain)
R q JC
1.3
° C/W
G
= Pb ? Free Package
Junction ? to ? Ambient ? Steady State (Note 2) R q JA 37
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
Device Package Shipping ?
NVD5117PLT4G DPAK 2500 / Tape &
(Pb ? Free) Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
September, 2011 ? Rev. 0
1
Publication Order Number:
NVD5117PL/D
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