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| 型号： | NVD5865NLT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 60V DPAK-4 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 19A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1400pF @ 25V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NVD5865NL
Power MOSFET
60 V, 46 A, 16 m W , Single N ? Channel
Features
? Low R DS(on) to Minimize Conduction Losses
? High Current Capability
? Avalanche Energy Specified
? AEC ? Q101 Qualified
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
60 V
http://onsemi.com
R DS(on)
16 m W @ 10 V
19 m W @ 4.5 V
I D
46 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
60
" 20
Unit
V
V
D
Continuous Drain Cur-
rent R q JC (Notes 1 & 3)
Power Dissipation R q JC
(Note 1)
Steady
State
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
T C = 100 ° C
I D
P D
46
33
71
36
A
W
G
S
N ? CHANNEL MOSFET
Continuous Drain Cur-
rent R q JA (Notes 1, 2 &
3)
Power Dissipation R q JA
(Notes 1 & 2)
Steady
State
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 100 ° C
I D
P D
10
7.0
3.1
1.5
A
W
1 2
3
4
Pulsed Drain Current
Current Limited by
Package (Note 3)
T A = 25 ° C, t p = 10 m s
T A = 25 ° C
I DM
I Dmaxpkg
203
60
A
A
DPAK
CASE 369AA
STYLE 2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J , T stg
I S
E AS
I AS
T L
? 55 to
175
46
36
27
260
° C
A
mJ
A
° C
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
2
1 Drain 3
Gate Source
Parameter
Symbol
Value
Unit
Y = Year
Junction ? to ? Case (Drain) (Note 1) R q JC 2.1 ° C/W
Junction ? to ? Ambient ? Steady State (Note 2) R q JA 49
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
WW = Work Week
V5865L = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 2
1
Publication Order Number:
NVD5865NL/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NVD5867NLT4G | 功能描述:MOSFET NFET 60V 18A 43MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVD5890N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 123 A, Single Na??Channel DPAK |
| NVD5890NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 3.7 m, 123 A, Single N.Channel DPAK |
| NVD5890NLT4G | 功能描述:MOSFET 40V T2 DPAK USR GRESHAM F RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVD5890NT4G | 功能描述:MOSFET 8-64MHZ 3.3V GP EMI RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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