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| 型号： | NVF5P03T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 3.7A SOT-223 |
| 标准包装： | 4,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 5.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 950pF @ 25V |
| 功率 - 最大： | 1.56W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
NTF5P03, NVF5P03
Power MOSFET
-5.2 A, -30 V
P ? Channel SOT ? 223
Features
? Ultra Low R DS(on)
? Higher Efficiency Extending Battery Life
? Logic Level Gate Drive
? Miniature SOT ? 223 Surface Mount Package
? Avalanche Energy Specified
? AEC ? Q101 Qualified and PPAP Capable ? NVF5P03T3G
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? DC ? DC Converters
? Power Management
? Motor Controls
? Inductive Loads
? Replaces MMFT5P03HD
http://onsemi.com
? 5.2 AMPERES, ? 30 VOLTS
R DS(on) = 100 m W
S
G
D
P ? Channel MOSFET
MARKING
4
DIAGRAM
& PIN
1
2
3
ASSIGNMENT
Drain
4
SOT ? 223
CASE 318E
STYLE 3
AYM
5P03 G
G
1
2
3
Gate
Drain Source
A = Assembly Location
Y = Year
M = Date Code
5P03 = Specific Device Code
G
= Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTF5P03T3G
NVF5P03T3G
Package
SOT ? 223
(Pb ? Free)
SOT ? 223
(Pb ? Free)
Shipping ?
4000 / Tape &
Reel
4000 / Tape &
Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 6
1
Publication Order Number:
NTF5P03T3/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
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