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| 型号： | NVMFD5877NLT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 17A 8SOIC |
| 标准包装： | 1,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 39 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 540pF @ 25V |
| 功率 - 最大： | 3.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | 8-DFN（5x6） |
| 包装： | 带卷 (TR) |
NVMFD5877NL,
NVMFD5877NLWF
Power MOSFET
60 V, 39 m W , 17 A, Dual N ? Channel, Logic
Level, Dual SO8FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVMFD5877NLWF ? Wettable Flanks Product
? AEC ? Q101 Qualified and PPAP Capable
? These Devices are Pb ? Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
39 m W @ 10 V
60 m W @ 4.5 V
I D MAX
17 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
60
" 20
Unit
V
V
D1
Dual N ? Channel
D2
Continuous Drain Cur-
rent R Y J ? mb (Notes 1,
2, 3, 4)
Power Dissipation
R Y J ? mb (Notes 1, 2, 3)
Steady
State
T mb = 25 ° C
T mb = 100 ° C
T mb = 25 ° C
T mb = 100 ° C
I D
P D
17
12
23
12
A
W
G1
S1
G2
S2
3, 4) T A = 100 ° C
Power Dissipation
T A = 25 ° C
R q JA (Notes 1, 3)
10 V, R G = 25 W )
G1
D1
5877xx
AYWZZ
G2
D2
D2 D2
Continuous Drain Cur- T A = 25 ° C
rent R q JA (Notes 1 &
Steady
State
T A = 100 ° C
Pulsed Drain Current T A = 25 ° C, t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? (I L(pk) = 14.5 A, L =
to ? Source Avalanche 0.1 mH)
Energy (T J = 25 ° C,
V DD = 24 V, V GS = (I L(pk) = 6.3 A, L =
2 mH)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I D
P D
I DM
T J , T stg
I S
E AS
T L
6
5
3.2
1.6
74
? 55 to
+175
19
10.5
40
260
A
W
A
° C
A
mJ
° C
MARKING DIAGRAM
D1 D1
S1 D1
1
DFN8 5x6 S2 D2
(SO8FL)
CASE 506BT
5877NL = Specific Device Code
for NVMFD5877NL
5877LW = Specific Device Code
for NVMFD5877NLWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
ORDERING INFORMATION
Device Package Shipping ?
NVMFD5877NLT1G DFN8 1500 / Tape &
(Pb ? Free) Reel
Parameter
Junction ? to ? Mounting Board (top) ? Steady
State (Note 2, 3)
Junction ? to ? Ambient ? Steady State (Note 3)
Symbol
R Y J ? mb
R q JA
Value
6.5
47
Unit
° C/W
NVMFD5877NLWFT1G
NVMFD5877NLT3G
DFN8
(Pb ? Free)
DFN8
(Pb ? Free)
1500 / Tape &
Reel
5000 / Tape &
Reel
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi ( Y ) is used as required per JESD51 ? 12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
NVMFD5877NLWFT3G DFN8 5000 / Tape &
(Pb ? Free) Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
November, 2013 ? Rev. 8
1
Publication Order Number:
NVMFD5877NL/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NVMFD5877NLT3G | 功能描述:MOSFET NFET SO8FL 60V 17A 39MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVMFD5877NLWF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 39 m, 17 A, Dual Na??Channel, Logic Level, Dual SO8FL |
| NVMFD5877NLWFT1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 39 m, 17 A, Dual Na??Channel, Logic Level, Dual SO8FL |
| NVMFD5877NLWFT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 39 m, 17 A, Dual Na??Channel, Logic Level, Dual SO8FL |
| NVMFS4841NT1G | 功能描述:MOSFET Single N-Channel 30V,89A,7mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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