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| 型号： | NVMFS4841NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 89A SO-8FL |
| 标准包装： | 1,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1436pF @ 12V |
| 功率 - 最大： | 3.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
NVMFS4841N
Power MOSFET
30V, 7 m W , 89A, Single N ? Channel SO8FL
Features
? Small Footprint (5x6 mm) for Compact Design
? Low R DS(on) to Minimize Conduction Losses
? Low Q G and Capacitance to Minimize Driver Losses
? NVMFS4841NWF ? Wettable Flanks Product
? AEC ? Q101 Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
7.0 m W @ 10 V
11.4 m W @ 4.5 V
I D MAX
89 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
" 20
V
V
D (5,6)
Continuous Drain Cur-
rent R Y J ? mb (Notes 1,
2, 3, 4)
Power Dissipation
R Y J ? mb (Notes 1, 2, 3)
Steady
State
T mb = 25 ° C
T mb = 100 ° C
T mb = 25 ° C
T mb = 100 ° C
I D
P D
89
63
112
56
A
W
G (4)
S (1,2,3)
Power Dissipation
T A = 25 ° C
R q JA (Notes 1, 3)
S
Continuous Drain Cur- T A = 25 ° C
rent R q JA (Notes 1 &
3, 4) Steady T A = 100 ° C
State
T A = 100 ° C
Pulsed Drain Current T A = 25 ° C, t p = 10 m s
Current limited by package T A = 25 ° C
(Note 4)
Operating Junction and Storage Temperature
I D
P D
I DM
I DmaxPkg
T J , T stg
16
11
3.7
1.8
336
80
? 55 to
175
A
W
A
A
° C
1
N ? CHANNEL MOSFET
MARKING
DIAGRAM
D
DFN5 S XXXXXX
(SO ? 8FL) S AYWZZ
CASE 488AA G
STYLE 1 D
D
D
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 24 V, V GS = 10 V,
I L(pk) = 19 A, L = 1.0 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
E AS
T L
51
180
260
A
mJ
° C
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Junction ? to ? Mounting Board (top) ? Steady
State (Note 2, 3)
Junction ? to ? Ambient ? Steady State (Note 3)
Symbol
R Y J ? mb
R q JA
Value
1.3
41
Unit
° C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi ( Y ) is used as required per JESD51 ? 12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
? Semiconductor Components Industries, LLC, 2013
May, 2013 ? Rev. 3
1
Publication Order Number:
NVMFS4841N/D
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相关代理商/技术参数 |
参数描述 |
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| NVMFS4841NT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30V, 7 m, 89A, Single N?Channel SO8FL |
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| NVMFS5826NLT1G | 功能描述:MOSFET NFET SO8FL 60V 26A 24MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVMFS5826NLT3G | 功能描述:MOSFET NFET SO8FL 60V 26A 24MOHM RoHS:否 制造商:ON Semiconductor 晶体管极性: 汲极/源极击穿电压: 闸/源击穿电压: 漏极连续电流: 电阻汲极/源极 RDS（导通）: 配置: 最大工作温度: 安装风格: 封装 / 箱体: 封装: |
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