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| 型号： | NVD5890NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 100A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 24A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.7 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4760pF @ 25V |
| 功率 - 最大： | 4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 带卷 (TR) |
NVD5890N
Power MOSFET
40 V, 123 A, Single N ? Channel DPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? MSL 1/260 ° C
? AEC Q101 Qualified and PPAP Capable
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? Motor Drivers
? Pump Drivers for Automotive Braking, Steering and Other High
Current Systems
V (BR)DSS
40 V
http://onsemi.com
R DS(on)
3.7 m W @ 10 V
D
I D
123 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
G
N ? Channel
rent (R q JC )
Continuous Drain Cur-
T A = 25 ° C
rent (R q JA ) (Note 1)
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Continuous Drain Cur- T C = 25 ° C
T C = 85 ° C
Power Dissipation T C = 25 ° C
(R q JC ) Steady
State
T A = 85 ° C
Power Dissipation T A = 25 ° C
(R q JA ) (Note 1)
Pulsed Drain Current t p =10 m s T A = 25 ° C
Current Limited by Package T A = 25 ° C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
V DSS
V GS
I D
P D
I D
P D
I DM
I DmaxPkg
T J , T stg
I S
dV/dt
40
" 20
123
95
107
24
18.5
4.0
400
100
? 55 to
175
100
6.0
V
V
A
W
A
W
A
A
° C
A
V/ns
S
4
1 2
3
CASE 369C
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
Single Pulse Drain ? to ? Source Avalanche En- E AS 240 mJ
ergy (V DD = 32 V, V GS = 10 V,
L = 0.3 mH, I L(pk) = 40 A, R G = 25 W )
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y
WW
5890N
G
2
1 Drain 3
Gate Source
= Year
= Work Week
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
January, 2012 ? Rev. 1
1
Publication Order Number:
NVD5890N/D
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| NVD6414ANT4G | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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