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参数资料
| 型号： | NVD5803NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 85A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 85A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.7 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 51nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3220pF @ 25V |
| 功率 - 最大： | 83W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NVD5803N
Power MOSFET
40 V, 85 A, Single N ? Channel, DPAK
Features
? Low R DS(on)
? High Current Capability
? Avalanche Energy Specified
? AEC ? Q101 Qualified
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? DC Motor Drive
? Reverse Battery Protection
? Glow Plug
V (BR)DSS
40 V
http://onsemi.com
R DS(on) MAX
5.7 m W @ 10 V
D
I D MAX
85 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
G
Current (R q JC )
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Continuous Drain T C = 25 ° C
(Note 1) Steady T C = 100 ° C
State
Power Dissipation T C = 25 ° C
(R q JC ) (Note 1)
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 V, V GS = 10 V, R G = 25 W ,
I L(pk) = 40 A, L = 0.3 mH)
V DSS
V GS
I D
P D
I DM
T J , T stg
I S
E AS
40
" 20
85
61
83
228
? 55 to
175
85
240
V
V
A
W
A
° C
A
mJ
S
N ? CHANNEL MOSFET
4
1 2
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
MARKING DIAGRAM
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
& PIN ASSIGNMENT
4
Drain
Parameter
Junction ? to ? Case (Drain)
Symbol
R q JC
Value
1.8
Unit
° C/W
2
1 Drain 3
Gate Source
Junction ? to ? Ambient ? Steady State (Note 1) R q JA
1. Surface ? mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
42
Y
WW
5803N
G
= Year
= Work Week
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
April, 2010 ? Rev. 0
1
Publication Order Number:
NVD5803N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NVD5805N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 51 A, Single N.Channel, DPAK |
| NVD5805NT4G | 功能描述:MOSFET NFET DPAK 40V 51A 9.5MOHM RoHS:否 制造商:ON Semiconductor 晶体管极性: 汲极/源极击穿电压: 闸/源击穿电压: 漏极连续电流: 电阻汲极/源极 RDS（导通）: 配置: 最大工作温度: 安装风格: 封装 / 箱体: 封装: |
| NVD5806NT4G | 功能描述:MOSFET POWER MOSFET 40V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVD5807NT4G | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVD5862NT4G | 功能描述:MOSFET NFET 60V 98A 5.7MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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