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参数资料
| 型号： | NTZD5110NT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 60V SOT563 |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 8,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 294mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.6 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 24.5pF @ 20V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 带卷 (TR) |
NTZD5110N
PACKAGE DIMENSIONS
SOT?563, 6 LEAD
CASE 463A
ISSUE F
NOTES:
D
?X?
A
L
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
6
5
4
MILLIMETERS
INCHES
1
2
3
E
?Y?
H E
DIM
A
b
MIN NOM MAX
0.50 0.55 0.60
0.17 0.22 0.27
MIN
0.020
0.007
NOM MAX
0.021 0.023
0.009 0.011
C
D
0.08 0.12 0.18
1.50 1.60 1.70
0.003
0.059
0.005 0.007
0.062 0.066
e
b 65 PL
0.08 (0.003)
M
X Y
C
E
e
L
1.10 1.20 1.30
0.5 BSC
0.10 0.20 0.30
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
H E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
SCALE 20:1
inches
1.50 1.60 1.70
0.059 0.062 0.066
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NTZD5110N/D
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